JPS56111232A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS56111232A
JPS56111232A JP1417280A JP1417280A JPS56111232A JP S56111232 A JPS56111232 A JP S56111232A JP 1417280 A JP1417280 A JP 1417280A JP 1417280 A JP1417280 A JP 1417280A JP S56111232 A JPS56111232 A JP S56111232A
Authority
JP
Japan
Prior art keywords
psg
si3n48
si3n4
polyimide
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1417280A
Other languages
Japanese (ja)
Inventor
Atsushi Nakano
Kazunari Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1417280A priority Critical patent/JPS56111232A/en
Publication of JPS56111232A publication Critical patent/JPS56111232A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain a device of high reliability, by stacking Si3N4, and PSG (phosphosilicate glass) on the wiring materials and forming an antiradioactive-rays film on the PSG after the formation of electrode window. CONSTITUTION:Adjacent to the N type source-drain layer 5 on the P type Si substrate, a PSG 6 is formed with a hole, and the Al7, the Si3N48 and the PSG 9 are stacked thereon. After a resist-mask is coated and a film 9 is etched so that a hole is formed, polyimide 11 is coated thereon as a protective means against the alpha rays and the portion thereof at the hole is selectively removed. Then the Si3N48 is etched away by the CF4 gas plasma. With such an arrangement, not only the etching control of the PSG film 8 is unnecessitated because of the presence of the Si3N4, but also the etching by the chemical liquid is spared to remove the Si3N48, resulting in the protection of the polyimide. Further, though the gas plasma easily etch away the Si3N4, the same hardly affect the polyimide. Therefore the device of higher reliability which is protected against the alpha rays can be obtained.
JP1417280A 1980-02-07 1980-02-07 Preparation of semiconductor device Pending JPS56111232A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1417280A JPS56111232A (en) 1980-02-07 1980-02-07 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1417280A JPS56111232A (en) 1980-02-07 1980-02-07 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56111232A true JPS56111232A (en) 1981-09-02

Family

ID=11853716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1417280A Pending JPS56111232A (en) 1980-02-07 1980-02-07 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56111232A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5233490A (en) * 1975-09-09 1977-03-14 Nec Corp Manufacturing process of semiconductor device
JPS54107258A (en) * 1978-02-10 1979-08-22 Hitachi Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5233490A (en) * 1975-09-09 1977-03-14 Nec Corp Manufacturing process of semiconductor device
JPS54107258A (en) * 1978-02-10 1979-08-22 Hitachi Ltd Semiconductor device

Similar Documents

Publication Publication Date Title
JPS55163860A (en) Manufacture of semiconductor device
JPS56111232A (en) Preparation of semiconductor device
JPS56125855A (en) Manufacture of semiconductor device
JPS5710936A (en) Forming method for contact hole
JPS575329A (en) Manufacture of semiconductor device
JPS56125856A (en) Manufacture of semiconductor device
JPS5289468A (en) Semiconductor device
JPS56103424A (en) Plasma etching method
JPS55154750A (en) Manufacture of semiconductor device
JPS5272571A (en) Production of semiconductor device
JPS54111772A (en) Manufacture for semiconductor device
JPS5715423A (en) Manufacture of semiconductor device
JPS56144556A (en) Manufacture of semiconductor device
JPS5458389A (en) Forming method of polyimide film in semiconductor device
JPS56130925A (en) Manufacture of semiconductor device
JPS5792849A (en) Manufacture of semiconductor device
JPS5762543A (en) Manufacture of semiconductor device
JPS5762542A (en) Manufacture of semiconductor device
JPS56137655A (en) Manufacture of semiconductor device
JPS5252566A (en) Production of semiconductor element
JPS571244A (en) Semiconductor device
JPS56115537A (en) Forming method of infinitesimal pattern
JPS57208160A (en) Semiconductor device
JPS644047A (en) Semiconductor device
JPS56111215A (en) Preparation of semiconductor device