JPS5458389A - Forming method of polyimide film in semiconductor device - Google Patents
Forming method of polyimide film in semiconductor deviceInfo
- Publication number
- JPS5458389A JPS5458389A JP12549877A JP12549877A JPS5458389A JP S5458389 A JPS5458389 A JP S5458389A JP 12549877 A JP12549877 A JP 12549877A JP 12549877 A JP12549877 A JP 12549877A JP S5458389 A JPS5458389 A JP S5458389A
- Authority
- JP
- Japan
- Prior art keywords
- polyimide film
- film
- hole
- forming
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To enable to form high density wiring of low parasitic capacitance, by forming the through hole of the same degree of film thickness for the polyimide film, thru the sequential etching process by chemical etching and oxygen plasma etching.
CONSTITUTION: After forming the SiO2 film 2 on the Si substrate 1, the lower layer aluminum wiring 3 on the upper layer, and the polyimide film 4 with coating, the etching protective film 5 opening window to the region forming the through hole 4b is formed on the polyimide film 4. Next, the polyimide film 4 is etched for a given amount with the etchant at least including the hydrazine hydrate and it is further etched under the atomosphere of oxygen plasma ions and/or neutral oxygen radical, and after obtaining the through hole 4b, the upper layer aluminum wiring 6 can be obtained with vacuum evaporation
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12549877A JPS5946419B2 (en) | 1977-10-18 | 1977-10-18 | Method of forming polyimide film in semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12549877A JPS5946419B2 (en) | 1977-10-18 | 1977-10-18 | Method of forming polyimide film in semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5458389A true JPS5458389A (en) | 1979-05-11 |
JPS5946419B2 JPS5946419B2 (en) | 1984-11-12 |
Family
ID=14911585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12549877A Expired JPS5946419B2 (en) | 1977-10-18 | 1977-10-18 | Method of forming polyimide film in semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5946419B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54158183A (en) * | 1978-06-05 | 1979-12-13 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS589340A (en) * | 1981-07-08 | 1983-01-19 | Nec Corp | Manufacture of two-level crossing electrode |
-
1977
- 1977-10-18 JP JP12549877A patent/JPS5946419B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54158183A (en) * | 1978-06-05 | 1979-12-13 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS589340A (en) * | 1981-07-08 | 1983-01-19 | Nec Corp | Manufacture of two-level crossing electrode |
Also Published As
Publication number | Publication date |
---|---|
JPS5946419B2 (en) | 1984-11-12 |
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