JPS5458389A - Forming method of polyimide film in semiconductor device - Google Patents

Forming method of polyimide film in semiconductor device

Info

Publication number
JPS5458389A
JPS5458389A JP12549877A JP12549877A JPS5458389A JP S5458389 A JPS5458389 A JP S5458389A JP 12549877 A JP12549877 A JP 12549877A JP 12549877 A JP12549877 A JP 12549877A JP S5458389 A JPS5458389 A JP S5458389A
Authority
JP
Japan
Prior art keywords
polyimide film
film
hole
forming
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12549877A
Other languages
Japanese (ja)
Other versions
JPS5946419B2 (en
Inventor
Hisashi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP12549877A priority Critical patent/JPS5946419B2/en
Publication of JPS5458389A publication Critical patent/JPS5458389A/en
Publication of JPS5946419B2 publication Critical patent/JPS5946419B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To enable to form high density wiring of low parasitic capacitance, by forming the through hole of the same degree of film thickness for the polyimide film, thru the sequential etching process by chemical etching and oxygen plasma etching.
CONSTITUTION: After forming the SiO2 film 2 on the Si substrate 1, the lower layer aluminum wiring 3 on the upper layer, and the polyimide film 4 with coating, the etching protective film 5 opening window to the region forming the through hole 4b is formed on the polyimide film 4. Next, the polyimide film 4 is etched for a given amount with the etchant at least including the hydrazine hydrate and it is further etched under the atomosphere of oxygen plasma ions and/or neutral oxygen radical, and after obtaining the through hole 4b, the upper layer aluminum wiring 6 can be obtained with vacuum evaporation
COPYRIGHT: (C)1979,JPO&Japio
JP12549877A 1977-10-18 1977-10-18 Method of forming polyimide film in semiconductor device Expired JPS5946419B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12549877A JPS5946419B2 (en) 1977-10-18 1977-10-18 Method of forming polyimide film in semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12549877A JPS5946419B2 (en) 1977-10-18 1977-10-18 Method of forming polyimide film in semiconductor device

Publications (2)

Publication Number Publication Date
JPS5458389A true JPS5458389A (en) 1979-05-11
JPS5946419B2 JPS5946419B2 (en) 1984-11-12

Family

ID=14911585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12549877A Expired JPS5946419B2 (en) 1977-10-18 1977-10-18 Method of forming polyimide film in semiconductor device

Country Status (1)

Country Link
JP (1) JPS5946419B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158183A (en) * 1978-06-05 1979-12-13 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS589340A (en) * 1981-07-08 1983-01-19 Nec Corp Manufacture of two-level crossing electrode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158183A (en) * 1978-06-05 1979-12-13 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS589340A (en) * 1981-07-08 1983-01-19 Nec Corp Manufacture of two-level crossing electrode

Also Published As

Publication number Publication date
JPS5946419B2 (en) 1984-11-12

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