JPS57143846A - Formation of multi-layer wiring compostion - Google Patents
Formation of multi-layer wiring compostionInfo
- Publication number
- JPS57143846A JPS57143846A JP2777781A JP2777781A JPS57143846A JP S57143846 A JPS57143846 A JP S57143846A JP 2777781 A JP2777781 A JP 2777781A JP 2777781 A JP2777781 A JP 2777781A JP S57143846 A JPS57143846 A JP S57143846A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulation film
- flat
- wiring
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Magnetic Heads (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To make layer insulation film flat by a method wherein the layer insulation film is formed to the thickness more than approximately two times of the minimum interval of electrode wiring by vapor phase growth to make its surface flat, then the layer insulation film is etched from the surface. CONSTITUTION:Wiring 2 of the first layer is formed on an Si substrate on which insulation film is formed and PSG film 3 is formed on the whole surface by vapor phase growth. With the growth of the PSG film, the difference in level along the cross sectional shape of the first layer wiring is relieved and the surface of the insulation film becomes almost flat after the growth reaches to the thickness approximately two times of the interval of the first layer wiring. After that the surface is etched to the specified thickness more uniformly by isotropic etching such as ion milling or reactive sputter etching, so that the flat layer insulation layer of the specified thickness can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2777781A JPS57143846A (en) | 1981-02-27 | 1981-02-27 | Formation of multi-layer wiring compostion |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2777781A JPS57143846A (en) | 1981-02-27 | 1981-02-27 | Formation of multi-layer wiring compostion |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57143846A true JPS57143846A (en) | 1982-09-06 |
Family
ID=12230397
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2777781A Pending JPS57143846A (en) | 1981-02-27 | 1981-02-27 | Formation of multi-layer wiring compostion |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57143846A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60229349A (en) * | 1984-04-27 | 1985-11-14 | Nec Corp | Formation of internal wiring of semiconductor device |
JPS63122269A (en) * | 1986-11-12 | 1988-05-26 | Nec Corp | Manufacture of semiconductor integrated circuit |
JPH0256933A (en) * | 1988-05-18 | 1990-02-26 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5094892A (en) * | 1973-12-22 | 1975-07-28 | ||
JPS5444482A (en) * | 1977-09-14 | 1979-04-07 | Matsushita Electric Ind Co Ltd | Mos type semiconductor device and its manufacture |
JPS5511354A (en) * | 1978-07-12 | 1980-01-26 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor |
-
1981
- 1981-02-27 JP JP2777781A patent/JPS57143846A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5094892A (en) * | 1973-12-22 | 1975-07-28 | ||
JPS5444482A (en) * | 1977-09-14 | 1979-04-07 | Matsushita Electric Ind Co Ltd | Mos type semiconductor device and its manufacture |
JPS5511354A (en) * | 1978-07-12 | 1980-01-26 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60229349A (en) * | 1984-04-27 | 1985-11-14 | Nec Corp | Formation of internal wiring of semiconductor device |
JPS63122269A (en) * | 1986-11-12 | 1988-05-26 | Nec Corp | Manufacture of semiconductor integrated circuit |
JPH0256933A (en) * | 1988-05-18 | 1990-02-26 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
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