JPS54152984A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54152984A JPS54152984A JP6192678A JP6192678A JPS54152984A JP S54152984 A JPS54152984 A JP S54152984A JP 6192678 A JP6192678 A JP 6192678A JP 6192678 A JP6192678 A JP 6192678A JP S54152984 A JPS54152984 A JP S54152984A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- pattern
- wiring pattern
- heat treatment
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To obtain a fine wiring pattern by forming a pattern of Al alloy or Al except Al-Cu on a semiconductor substrate, by making Al-Cu alloy through a heat treatment with the pattern covered with a Cu thin film, and by removing a single Cu film.
CONSTITUTION: After the desired electrode windows of a diffusion layer and an insulating film are made, Al or Al-Si is vapor-deposited to a thickness of approximately 1μ and plasma etching is carried out by mixture gas of CCl and He to form an original wiring pattern. Next, the entire surface is coated with a Cu thin film and after alloy is made by Al of the original wiring and Cu through a heat treatment, Cu remaining itself on the substrate is etched. In this method, a fine wiring pattern of 1 to 2μ in wire width can be formed and electro-migration proof is also high because of Al-Cu alloy, so that the fining of wiring and an increase in current density can both be realized.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6192678A JPS54152984A (en) | 1978-05-24 | 1978-05-24 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6192678A JPS54152984A (en) | 1978-05-24 | 1978-05-24 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54152984A true JPS54152984A (en) | 1979-12-01 |
Family
ID=13185244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6192678A Pending JPS54152984A (en) | 1978-05-24 | 1978-05-24 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54152984A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57159044A (en) * | 1981-03-27 | 1982-10-01 | Toshiba Corp | Semiconductor device |
JPS6064452A (en) * | 1983-06-06 | 1985-04-13 | フエアチアイルド カメラ アンド インストルメント コ−ポレ−シヨン | Aluminum mutual connector with copper |
JPS63308914A (en) * | 1987-06-11 | 1988-12-16 | Nec Corp | Forming method for aluminum alloy wiring |
-
1978
- 1978-05-24 JP JP6192678A patent/JPS54152984A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57159044A (en) * | 1981-03-27 | 1982-10-01 | Toshiba Corp | Semiconductor device |
JPH035657B2 (en) * | 1981-03-27 | 1991-01-28 | Tokyo Shibaura Electric Co | |
JPS6064452A (en) * | 1983-06-06 | 1985-04-13 | フエアチアイルド カメラ アンド インストルメント コ−ポレ−シヨン | Aluminum mutual connector with copper |
JPS63308914A (en) * | 1987-06-11 | 1988-12-16 | Nec Corp | Forming method for aluminum alloy wiring |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55163860A (en) | Manufacture of semiconductor device | |
JPS57176746A (en) | Semiconductor integrated circuit and manufacture thereof | |
JPS54152984A (en) | Manufacture of semiconductor device | |
JPS5518056A (en) | Semiconductor device | |
JPS57145340A (en) | Manufacture of semiconductor device | |
US3847690A (en) | Method of protecting against electrochemical effects during metal etching | |
JPS5669843A (en) | Manufacture of semiconductor device | |
JPS56148845A (en) | Manufacture of semiconductor device | |
JPS5530803A (en) | Producing method of electronic parts | |
JPS559415A (en) | Semiconductor manufacturing method | |
JPS5527659A (en) | Method of manufacturing semiconductor device | |
JPS554970A (en) | Formation of electrode or wiring layer on substrate | |
JPS5711450A (en) | Manufacture of fluorescent display tube | |
JPS5536927A (en) | Manufacturing of semiconductor device | |
JPS57201026A (en) | Manufacture of semiconductor device | |
JPS5555546A (en) | Method of wiring semiconductor device | |
SU1358777A1 (en) | Double-level thin-film switchboard manufacturing process | |
JPS56104450A (en) | Manufacture of semiconductor device | |
JPS6261334A (en) | Formation of pattern | |
JPS5780074A (en) | Preparation of thermal head | |
JPS56130920A (en) | Forming method of electrode for semiconductor device | |
JPS5648151A (en) | Wiring formation of semiconductor device | |
JPH023926A (en) | Forming method of wiring | |
JPS56167331A (en) | Manufacture of semiconductor device | |
JPS55107781A (en) | Etching method for metal film |