JPS54152984A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54152984A
JPS54152984A JP6192678A JP6192678A JPS54152984A JP S54152984 A JPS54152984 A JP S54152984A JP 6192678 A JP6192678 A JP 6192678A JP 6192678 A JP6192678 A JP 6192678A JP S54152984 A JPS54152984 A JP S54152984A
Authority
JP
Japan
Prior art keywords
alloy
pattern
wiring pattern
heat treatment
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6192678A
Other languages
Japanese (ja)
Inventor
Moritaka Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6192678A priority Critical patent/JPS54152984A/en
Publication of JPS54152984A publication Critical patent/JPS54152984A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To obtain a fine wiring pattern by forming a pattern of Al alloy or Al except Al-Cu on a semiconductor substrate, by making Al-Cu alloy through a heat treatment with the pattern covered with a Cu thin film, and by removing a single Cu film.
CONSTITUTION: After the desired electrode windows of a diffusion layer and an insulating film are made, Al or Al-Si is vapor-deposited to a thickness of approximately 1μ and plasma etching is carried out by mixture gas of CCl and He to form an original wiring pattern. Next, the entire surface is coated with a Cu thin film and after alloy is made by Al of the original wiring and Cu through a heat treatment, Cu remaining itself on the substrate is etched. In this method, a fine wiring pattern of 1 to 2μ in wire width can be formed and electro-migration proof is also high because of Al-Cu alloy, so that the fining of wiring and an increase in current density can both be realized.
COPYRIGHT: (C)1979,JPO&Japio
JP6192678A 1978-05-24 1978-05-24 Manufacture of semiconductor device Pending JPS54152984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6192678A JPS54152984A (en) 1978-05-24 1978-05-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6192678A JPS54152984A (en) 1978-05-24 1978-05-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54152984A true JPS54152984A (en) 1979-12-01

Family

ID=13185244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6192678A Pending JPS54152984A (en) 1978-05-24 1978-05-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54152984A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57159044A (en) * 1981-03-27 1982-10-01 Toshiba Corp Semiconductor device
JPS6064452A (en) * 1983-06-06 1985-04-13 フエアチアイルド　カメラ　アンド　インストルメント　コ−ポレ−シヨン Aluminum mutual connector with copper
JPS63308914A (en) * 1987-06-11 1988-12-16 Nec Corp Forming method for aluminum alloy wiring

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57159044A (en) * 1981-03-27 1982-10-01 Toshiba Corp Semiconductor device
JPH035657B2 (en) * 1981-03-27 1991-01-28 Tokyo Shibaura Electric Co
JPS6064452A (en) * 1983-06-06 1985-04-13 フエアチアイルド　カメラ　アンド　インストルメント　コ−ポレ−シヨン Aluminum mutual connector with copper
JPS63308914A (en) * 1987-06-11 1988-12-16 Nec Corp Forming method for aluminum alloy wiring

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