SU1358777A1 - Double-level thin-film switchboard manufacturing process - Google Patents
Double-level thin-film switchboard manufacturing processInfo
- Publication number
- SU1358777A1 SU1358777A1 SU3977285/21A SU3977285A SU1358777A1 SU 1358777 A1 SU1358777 A1 SU 1358777A1 SU 3977285/21 A SU3977285/21 A SU 3977285/21A SU 3977285 A SU3977285 A SU 3977285A SU 1358777 A1 SU1358777 A1 SU 1358777A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- ports
- layer
- film
- double
- manufacturing process
- Prior art date
Links
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
FIELD: microelectronics. SUBSTANCE: steel substrate us covered with V-Cu-V-Al structure and then 1st layer conductors are formed by selective photolithography using positive photoresist. Negative photoresist is used for shaping protective mask with ports for intermediate contact posts. Ports to 1st layer conducting film are made by etching layers Al and V. Copper contact pads are run over with tin through these ports. Then silicon monoxide insulating film is applied and substrate is tinned again. Melting of posts from solder causes fracture of insulation above them with the result that the latter are built up. Second deposition layer is obtained by evaporating V-Cu-V-Al structure and shaping pattern of 2nd layer conductors. Up to 60% higher yield is obtained. EFFECT: improved yield percentage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU3977285/21A SU1358777A1 (en) | 1985-11-18 | 1985-11-18 | Double-level thin-film switchboard manufacturing process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU3977285/21A SU1358777A1 (en) | 1985-11-18 | 1985-11-18 | Double-level thin-film switchboard manufacturing process |
Publications (1)
Publication Number | Publication Date |
---|---|
SU1358777A1 true SU1358777A1 (en) | 1996-06-20 |
Family
ID=60533541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU3977285/21A SU1358777A1 (en) | 1985-11-18 | 1985-11-18 | Double-level thin-film switchboard manufacturing process |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU1358777A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2459314C1 (en) * | 2011-04-06 | 2012-08-20 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" | Method of making thin-film multilevel boards for multichip modules, hybrid integrated circuits and chip assemblies |
RU2474004C1 (en) * | 2011-08-16 | 2013-01-27 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" | Method to manufacture multi-level thin-film microcircuit chips |
-
1985
- 1985-11-18 SU SU3977285/21A patent/SU1358777A1/en active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2459314C1 (en) * | 2011-04-06 | 2012-08-20 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" | Method of making thin-film multilevel boards for multichip modules, hybrid integrated circuits and chip assemblies |
RU2474004C1 (en) * | 2011-08-16 | 2013-01-27 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" | Method to manufacture multi-level thin-film microcircuit chips |
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