SU1358777A1 - Double-level thin-film switchboard manufacturing process - Google Patents

Double-level thin-film switchboard manufacturing process

Info

Publication number
SU1358777A1
SU1358777A1 SU3977285/21A SU3977285A SU1358777A1 SU 1358777 A1 SU1358777 A1 SU 1358777A1 SU 3977285/21 A SU3977285/21 A SU 3977285/21A SU 3977285 A SU3977285 A SU 3977285A SU 1358777 A1 SU1358777 A1 SU 1358777A1
Authority
SU
USSR - Soviet Union
Prior art keywords
ports
layer
film
double
manufacturing process
Prior art date
Application number
SU3977285/21A
Other languages
Russian (ru)
Inventor
Н.Н. Пересветов
А.А. Плеханов
В.А. Киселев
В.Н. Гусев
Л.М. Рябинкина
С.Б. Прокофьев
Original Assignee
Ярославское научно-производственное объединение "Электронприбор" Всесоюзного производственного объединения "Союзтехноприбор"
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ярославское научно-производственное объединение "Электронприбор" Всесоюзного производственного объединения "Союзтехноприбор" filed Critical Ярославское научно-производственное объединение "Электронприбор" Всесоюзного производственного объединения "Союзтехноприбор"
Priority to SU3977285/21A priority Critical patent/SU1358777A1/en
Application granted granted Critical
Publication of SU1358777A1 publication Critical patent/SU1358777A1/en

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Abstract

FIELD: microelectronics. SUBSTANCE: steel substrate us covered with V-Cu-V-Al structure and then 1st layer conductors are formed by selective photolithography using positive photoresist. Negative photoresist is used for shaping protective mask with ports for intermediate contact posts. Ports to 1st layer conducting film are made by etching layers Al and V. Copper contact pads are run over with tin through these ports. Then silicon monoxide insulating film is applied and substrate is tinned again. Melting of posts from solder causes fracture of insulation above them with the result that the latter are built up. Second deposition layer is obtained by evaporating V-Cu-V-Al structure and shaping pattern of 2nd layer conductors. Up to 60% higher yield is obtained. EFFECT: improved yield percentage.
SU3977285/21A 1985-11-18 1985-11-18 Double-level thin-film switchboard manufacturing process SU1358777A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU3977285/21A SU1358777A1 (en) 1985-11-18 1985-11-18 Double-level thin-film switchboard manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU3977285/21A SU1358777A1 (en) 1985-11-18 1985-11-18 Double-level thin-film switchboard manufacturing process

Publications (1)

Publication Number Publication Date
SU1358777A1 true SU1358777A1 (en) 1996-06-20

Family

ID=60533541

Family Applications (1)

Application Number Title Priority Date Filing Date
SU3977285/21A SU1358777A1 (en) 1985-11-18 1985-11-18 Double-level thin-film switchboard manufacturing process

Country Status (1)

Country Link
SU (1) SU1358777A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2459314C1 (en) * 2011-04-06 2012-08-20 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Method of making thin-film multilevel boards for multichip modules, hybrid integrated circuits and chip assemblies
RU2474004C1 (en) * 2011-08-16 2013-01-27 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Method to manufacture multi-level thin-film microcircuit chips

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2459314C1 (en) * 2011-04-06 2012-08-20 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Method of making thin-film multilevel boards for multichip modules, hybrid integrated circuits and chip assemblies
RU2474004C1 (en) * 2011-08-16 2013-01-27 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Method to manufacture multi-level thin-film microcircuit chips

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