JPS56157047A - Manufacture of multilayer wiring in semiconductor device - Google Patents

Abstract

PURPOSE:To use no hydrofluoric acid by a method wherein although silicon is exposed on a dicing line part when silicate glass is etched, a metallic film for wirings is left behind on the dicing line part at the evaporation of silicon monoxide. CONSTITUTION:A silicon dioxide layer 2 and an Al film for the first layer wiring are formed on the surface of a wafer 1, the upper parts of the first layer wiring part 21 and the dicing line part 22 being removed, the Al film 3 being removed by resist 4, the resist 4 and said silicon layer 5 being removed after the first silicon oxide layer having been evaporated on the part where the resist 4 and the Al film 3 have been removed and then, the Al film 3 left on the dicing line part 22 is removed, an insulating film 6 being formed on the part where the Al film 3 has been removed, windows being opened at a communicating part of the first and second wirings and at the dicing line part, the Al film for the second layer wiring being formed, the upper parts of the second layer wiring part and the dicing line part being removed, the etching being applied to allow the first silicon oxide film 9 to be evaporated on the part etched, but hydrofluoric acid is not used.