JPS57147270A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57147270A
JPS57147270A JP56031699A JP3169981A JPS57147270A JP S57147270 A JPS57147270 A JP S57147270A JP 56031699 A JP56031699 A JP 56031699A JP 3169981 A JP3169981 A JP 3169981A JP S57147270 A JPS57147270 A JP S57147270A
Authority
JP
Japan
Prior art keywords
type
region
inverting input
substrate
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56031699A
Other languages
Japanese (ja)
Inventor
Hiroshi Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56031699A priority Critical patent/JPS57147270A/en
Publication of JPS57147270A publication Critical patent/JPS57147270A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Abstract

PURPOSE:To prevent the damage of a semiconductor integrated arithmetic amplifier by adding an electrostatic destruction preventing device having a P-N junction to an inverting input terminal and not adding a P-N junction to the non- inverting input terminal. CONSTITUTION:A semiconductor substrate having a P type Si substrate 1, an N type epitaxial layer 2, an N<+> type high density region 3 formed between the substrate 1 and the layer 2, a P type insulating region 4 for electrically isolating between FETs formed later or an element such as resistors, and an SiO2 film 5 for covering the surface is obtained. Then, the source 6, drain 7 and a protecting diode 8 of an MOSFET are simultaneously formed with P type impurity, and a back gate contact N<+> region 9 and a gate oxidized film 10 are further obtained. Then, a wire is laid by a deposition technique and a photoresist treatment. At this time the P type region 8 of the protecting diode is connected to the gate wiring of the MOSFET at the inverting input side.
JP56031699A 1981-03-05 1981-03-05 Semiconductor device Pending JPS57147270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56031699A JPS57147270A (en) 1981-03-05 1981-03-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56031699A JPS57147270A (en) 1981-03-05 1981-03-05 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57147270A true JPS57147270A (en) 1982-09-11

Family

ID=12338316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56031699A Pending JPS57147270A (en) 1981-03-05 1981-03-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57147270A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324982A (en) * 1985-09-25 1994-06-28 Hitachi, Ltd. Semiconductor memory device having bipolar transistor and structure to avoid soft error

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324982A (en) * 1985-09-25 1994-06-28 Hitachi, Ltd. Semiconductor memory device having bipolar transistor and structure to avoid soft error

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