JPS56120165A - Protecting device for input of semiconductor device - Google Patents

Protecting device for input of semiconductor device

Info

Publication number
JPS56120165A
JPS56120165A JP2481880A JP2481880A JPS56120165A JP S56120165 A JPS56120165 A JP S56120165A JP 2481880 A JP2481880 A JP 2481880A JP 2481880 A JP2481880 A JP 2481880A JP S56120165 A JPS56120165 A JP S56120165A
Authority
JP
Japan
Prior art keywords
substrate
voltage
resistance region
gate electrode
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2481880A
Other languages
Japanese (ja)
Other versions
JPH035069B2 (en
Inventor
Tsuneaki Isozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2481880A priority Critical patent/JPS56120165A/en
Publication of JPS56120165A publication Critical patent/JPS56120165A/en
Publication of JPH035069B2 publication Critical patent/JPH035069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Abstract

PURPOSE:To protect the input of the device by providing a low-resistance region of a conductive type reverse to a substrate under a wiring layer through the intermediary of an insulating layer. CONSTITUTION:In a P type Si substrate 1 are provided an N type resistance region 2, a P<+> type resistance region 3 and a source 4 and a drain 5, both of which are of N type. An opening is made in the insulating layer 6 on the surface and a gate electrode 7, an outside input part 8 and wirings 9 and 10 connecting the former two are prepared. When the substrate 1 is earthed and negative voltage is given to the outside input part 8 in this constitution, electrons flow from the resistance region 3 to the substrate 1, and owing to the fall of voltage caused thereby almost no voltage is applied to the gate electrode 7 of FET within the substrate. Moreover, when positive low voltage is given to the outside input part 8, all of it is applied to the gate electrode 7. Thus, the voltage applied to the gate electrode 7 is kept constatly between the breakdown voltage of the low-resistance region 3 and the potential of the substrate and thereby the reliability of the device is enhanced.
JP2481880A 1980-02-28 1980-02-28 Protecting device for input of semiconductor device Granted JPS56120165A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2481880A JPS56120165A (en) 1980-02-28 1980-02-28 Protecting device for input of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2481880A JPS56120165A (en) 1980-02-28 1980-02-28 Protecting device for input of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56120165A true JPS56120165A (en) 1981-09-21
JPH035069B2 JPH035069B2 (en) 1991-01-24

Family

ID=12148763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2481880A Granted JPS56120165A (en) 1980-02-28 1980-02-28 Protecting device for input of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56120165A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5871634A (en) * 1981-10-23 1983-04-28 Nissan Motor Co Ltd Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51117880A (en) * 1975-04-03 1976-10-16 Rca Corp Semiconductor device
JPS526470U (en) * 1975-06-30 1977-01-18
JPS5478674A (en) * 1977-12-05 1979-06-22 Nec Corp Input protective device for complementary semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51117880A (en) * 1975-04-03 1976-10-16 Rca Corp Semiconductor device
JPS526470U (en) * 1975-06-30 1977-01-18
JPS5478674A (en) * 1977-12-05 1979-06-22 Nec Corp Input protective device for complementary semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5871634A (en) * 1981-10-23 1983-04-28 Nissan Motor Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JPH035069B2 (en) 1991-01-24

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