JPS56138953A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56138953A JPS56138953A JP4174880A JP4174880A JPS56138953A JP S56138953 A JPS56138953 A JP S56138953A JP 4174880 A JP4174880 A JP 4174880A JP 4174880 A JP4174880 A JP 4174880A JP S56138953 A JPS56138953 A JP S56138953A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- gate oxide
- type
- layer
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
- Amplifiers (AREA)
Abstract
PURPOSE:To obtain a protection diode effectively functioning without supplying a bias voltage thereto by forming a gate oxide film having desired charge at a part of an MOS semiconductor device and applying a potential effectively to the gate. CONSTITUTION:An N<+> type silicon layer 14 is formed on the first element region 13a isolated by the field silicon oxide film 12 of a P type silicon substrate 11. A gate oxide film 17 having negative charge made of alumina covering the P-N junction 16 of the peripheral edge of an N<+> type Si layer 14 and P type Si substrate 11 is formed on a gate oxide film 15 made of SiO2 formed on the surface of the element region 13a. A wire 20 is formed through an insulating film 18, and connected to the drain 22 of an MOS transistor. Negative potential is applied to the gate oxide film 17' by the negative load of the alumina layer 17, the breakdown voltage of the P-N junction is decreased to protect the drain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4174880A JPS56138953A (en) | 1980-03-31 | 1980-03-31 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4174880A JPS56138953A (en) | 1980-03-31 | 1980-03-31 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56138953A true JPS56138953A (en) | 1981-10-29 |
Family
ID=12617037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4174880A Pending JPS56138953A (en) | 1980-03-31 | 1980-03-31 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56138953A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4720737A (en) * | 1983-06-30 | 1988-01-19 | Fujitsu Limited | Semiconductor device having a protection circuit with lateral bipolar transistor |
| US4990984A (en) * | 1987-11-27 | 1991-02-05 | Nec Corporation | Semiconductor device having protective element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5110773A (en) * | 1974-07-16 | 1976-01-28 | Nippon Electric Co | Mos gatahandotaikairo |
-
1980
- 1980-03-31 JP JP4174880A patent/JPS56138953A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5110773A (en) * | 1974-07-16 | 1976-01-28 | Nippon Electric Co | Mos gatahandotaikairo |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4720737A (en) * | 1983-06-30 | 1988-01-19 | Fujitsu Limited | Semiconductor device having a protection circuit with lateral bipolar transistor |
| US4990984A (en) * | 1987-11-27 | 1991-02-05 | Nec Corporation | Semiconductor device having protective element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH118U (en) | ESD protection device for SOI circuit | |
| TW335513B (en) | Semiconductor component for high voltage | |
| GB1309049A (en) | Integrated circuit with a protective input circuit | |
| JPS5688354A (en) | Semiconductor integrated circuit device | |
| GB1322933A (en) | Semiconductor device | |
| GB1109371A (en) | Metal-oxide-semiconductor field effect transistor | |
| GB1183150A (en) | Field Effect Transistor | |
| EP0361121A3 (en) | Semiconductor ic device with improved element isolating scheme | |
| JPS56138953A (en) | Semiconductor device | |
| JPS56165359A (en) | Semiconductor device | |
| JPS56110264A (en) | High withstand voltage mos transistor | |
| KR960001614B1 (en) | High voltage ic | |
| GB1255414A (en) | Protection means for semiconductor components | |
| JPS5681966A (en) | Input protecting circuit for semiconductor device | |
| JPS56118371A (en) | Semiconductor integrated circuit device | |
| JPS57192069A (en) | Insulated gate field effect semiconductor device | |
| JPS5522887A (en) | Mis type field effect semiconductor device | |
| JPS5740967A (en) | Integrated circuit device | |
| JPS5543864A (en) | Mis semiconductor device | |
| JPS5718353A (en) | Semiconductor device | |
| JPS5696867A (en) | Insulated gate type field effect semiconductor device | |
| JPS55102251A (en) | Mos integrated circuit device | |
| JPS54111287A (en) | Resin seal planar-structure semiconductor element | |
| JPS54141578A (en) | Semiconductor device | |
| JPS5627945A (en) | Semiconductor device with multilayered wiring |