JPS5696867A - Insulated gate type field effect semiconductor device - Google Patents

Insulated gate type field effect semiconductor device

Info

Publication number
JPS5696867A
JPS5696867A JP10693880A JP10693880A JPS5696867A JP S5696867 A JPS5696867 A JP S5696867A JP 10693880 A JP10693880 A JP 10693880A JP 10693880 A JP10693880 A JP 10693880A JP S5696867 A JPS5696867 A JP S5696867A
Authority
JP
Japan
Prior art keywords
gate
type
field effect
voltage
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10693880A
Other languages
Japanese (ja)
Other versions
JPS6048913B2 (en
Inventor
Masanori Kikuchi
Taiichi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55106938A priority Critical patent/JPS6048913B2/en
Publication of JPS5696867A publication Critical patent/JPS5696867A/en
Publication of JPS6048913B2 publication Critical patent/JPS6048913B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To protect the insulated gate type field effect semiconductor against a surge voltage by connecting an MOS gate controlled diode having low breakdown voltage to the source or drain of the MOSFET. CONSTITUTION:An N-channel MOSFETT1 having a gate oxide film 6 formed on a P type Si substrate 1 is formed, a gate controlled diode D1 having an N type layer 4, a P type inversion preventive layer 5, a gate oxide film 6', a polysilicon gate electrode 9 and an aluminum electrode 13 are formed, and the source 3 of the FETT1 is connected through an aluminum wire 12 to the N type layer 4. In this case the withstand voltage of the diode D1 is set lower than the T1. Since the withstand voltage utilizes the surface breakdown mechanism of the P-N junction controlled by the gate electrode according to this configuration, no difference of time constant exists for the breakdown mechanism. Accordingly, high voltage can be shut off by the protecting device, and the semiconductor device can be prevented from being damaged.
JP55106938A 1980-08-04 1980-08-04 Insulated gate field effect semiconductor device Expired JPS6048913B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55106938A JPS6048913B2 (en) 1980-08-04 1980-08-04 Insulated gate field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55106938A JPS6048913B2 (en) 1980-08-04 1980-08-04 Insulated gate field effect semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50071767A Division JPS51147972A (en) 1974-07-16 1975-06-13 Insulated gate field effect semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58163025A Division JPS59130471A (en) 1983-09-05 1983-09-05 Insulated gate type field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS5696867A true JPS5696867A (en) 1981-08-05
JPS6048913B2 JPS6048913B2 (en) 1985-10-30

Family

ID=14446322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55106938A Expired JPS6048913B2 (en) 1980-08-04 1980-08-04 Insulated gate field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS6048913B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59130471A (en) * 1983-09-05 1984-07-27 Nec Corp Insulated gate type field effect semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5543629A (en) * 1978-09-22 1980-03-27 Toshiba Corp Printer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5543629A (en) * 1978-09-22 1980-03-27 Toshiba Corp Printer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59130471A (en) * 1983-09-05 1984-07-27 Nec Corp Insulated gate type field effect semiconductor device

Also Published As

Publication number Publication date
JPS6048913B2 (en) 1985-10-30

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