TW366596B - Thin-film transistor and the manufacturing method - Google Patents

Thin-film transistor and the manufacturing method

Info

Publication number
TW366596B
TW366596B TW086108335A TW86108335A TW366596B TW 366596 B TW366596 B TW 366596B TW 086108335 A TW086108335 A TW 086108335A TW 86108335 A TW86108335 A TW 86108335A TW 366596 B TW366596 B TW 366596B
Authority
TW
Taiwan
Prior art keywords
gate insulation
insulation film
layer
gate
electrode
Prior art date
Application number
TW086108335A
Other languages
Chinese (zh)
Inventor
Kaichi Fukuda
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of TW366596B publication Critical patent/TW366596B/en

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Medicinal Preparation (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

The present invention aims to provide the gate electrode wiring of low resistance and the active layer plus the source electrode, discharge electrode for ohmic contact, requiring few masks in the process, thus a manufacturing method and structure of thin film transistor with good productivity, basically on the insulated substrate 11, by CVD, continuous stacking of the amorphous silicon layer and the first gate insulation layer 15, being both the insulation layer 15 and the amorphous silicon layer 12 made as islands. On the first gate insulation film 15 having stacked gate insulation film 16 and metal wiring layer, after etching the metal wiring layer to form gate electrode 17, the second gate insulation film 16 and the first gate insulation film 15 are etched, for patterning of the gate insulation film. Inside the amorphous silicon layer exposed by previous works, using the gate electrode 17 as mask for ion doping and laser lighting, to polycrystallize this portion to form the source region 13 and the discharge electrode 14.
TW086108335A 1996-06-20 1997-06-16 Thin-film transistor and the manufacturing method TW366596B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8159682A JPH1012882A (en) 1996-06-20 1996-06-20 Thin film transistor and manufacture thereof

Publications (1)

Publication Number Publication Date
TW366596B true TW366596B (en) 1999-08-11

Family

ID=15699028

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086108335A TW366596B (en) 1996-06-20 1997-06-16 Thin-film transistor and the manufacturing method

Country Status (3)

Country Link
JP (1) JPH1012882A (en)
KR (1) KR100343307B1 (en)
TW (1) TW366596B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI395331B (en) * 2003-10-13 2013-05-01 Samsung Electronics Co Ltd Thin film transistor, thin film transistor array panel, and display device

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100645035B1 (en) * 1998-12-08 2007-02-05 삼성전자주식회사 Manufacturing method of thin film transistor for liquid crystal display device
US6579749B2 (en) 1998-11-17 2003-06-17 Nec Corporation Fabrication method and fabrication apparatus for thin film transistor
KR100709704B1 (en) * 2000-05-12 2007-04-19 삼성전자주식회사 Thin film transistor substrate for liquid crystal display and manufacturing method thereof
JP4790896B2 (en) * 2000-05-26 2011-10-12 エーユー オプトロニクス コーポレイション Manufacturing method and manufacturing apparatus of active matrix device including top gate type TFT
JP2003188183A (en) 2001-12-20 2003-07-04 Fujitsu Display Technologies Corp Thin film transistor, its fabricating method and liquid crystal display
KR101006439B1 (en) 2003-11-12 2011-01-06 삼성전자주식회사 Method for manufacturing of Thin film transistor array panel
JP4715149B2 (en) * 2004-09-30 2011-07-06 ソニー株式会社 Method for manufacturing thin film semiconductor device
KR100875432B1 (en) 2007-05-31 2008-12-22 삼성모바일디스플레이주식회사 Method for manufacturing polycrystalline silicon layer, thin film transistor formed using same, method for manufacturing thereof and organic light emitting display device comprising same
KR100889626B1 (en) 2007-08-22 2009-03-20 삼성모바일디스플레이주식회사 Thin film transistor, fabricating method for the same, organic light emitting diode display device comprising the same, and fabricating method the same
KR100889627B1 (en) 2007-08-23 2009-03-20 삼성모바일디스플레이주식회사 Thin film transistor, fabricating method for the same, and organic light emitting diode display device comprising the same
KR100982310B1 (en) 2008-03-27 2010-09-15 삼성모바일디스플레이주식회사 TFT, fabricating methode of the TFT, and organic lighting emitting diode display device comprising the same
KR100989136B1 (en) 2008-04-11 2010-10-20 삼성모바일디스플레이주식회사 TFT, fabricating methode of the TFT, and organic lighting emitting diode display device comprising the same
KR101002666B1 (en) 2008-07-14 2010-12-21 삼성모바일디스플레이주식회사 Thin film transistor, fabricating methode of the same, and organic lighting emitting diode display device comprising the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639978A (en) * 1986-06-30 1988-01-16 Nec Corp Manufacture of thin-film transistor
JPS6435958A (en) * 1987-07-30 1989-02-07 Ricoh Kk Thin film transistor
JP2553704B2 (en) * 1989-06-16 1996-11-13 松下電子工業株式会社 Method for manufacturing semiconductor device
JPH0442577A (en) * 1990-06-08 1992-02-13 Seiko Epson Corp Thin film transistor
JP3057770B2 (en) * 1991-01-25 2000-07-04 セイコーエプソン株式会社 Method for manufacturing thin film transistor
JPH04328872A (en) * 1991-04-26 1992-11-17 A G Technol Kk Manufacture of polycrystalline thin film transistor and polycrystalline thin film transistor
JPH0520616A (en) * 1991-07-12 1993-01-29 Matsushita Electric Ind Co Ltd Write compensation circuit for floppy disk
JPH05206165A (en) * 1992-01-24 1993-08-13 Fuji Xerox Co Ltd Thin film transistor and manufacture thereof
JP3030367B2 (en) * 1993-07-20 2000-04-10 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
JPH07115201A (en) * 1993-10-15 1995-05-02 Sharp Corp Apparatus for manufacturing thin film transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI395331B (en) * 2003-10-13 2013-05-01 Samsung Electronics Co Ltd Thin film transistor, thin film transistor array panel, and display device

Also Published As

Publication number Publication date
KR100343307B1 (en) 2002-08-22
KR980006531A (en) 1998-03-30
JPH1012882A (en) 1998-01-16

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