TW366596B - Thin-film transistor and the manufacturing method - Google Patents
Thin-film transistor and the manufacturing methodInfo
- Publication number
- TW366596B TW366596B TW086108335A TW86108335A TW366596B TW 366596 B TW366596 B TW 366596B TW 086108335 A TW086108335 A TW 086108335A TW 86108335 A TW86108335 A TW 86108335A TW 366596 B TW366596 B TW 366596B
- Authority
- TW
- Taiwan
- Prior art keywords
- gate insulation
- insulation film
- layer
- gate
- electrode
- Prior art date
Links
Landscapes
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Medicinal Preparation (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Drying Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Abstract
The present invention aims to provide the gate electrode wiring of low resistance and the active layer plus the source electrode, discharge electrode for ohmic contact, requiring few masks in the process, thus a manufacturing method and structure of thin film transistor with good productivity, basically on the insulated substrate 11, by CVD, continuous stacking of the amorphous silicon layer and the first gate insulation layer 15, being both the insulation layer 15 and the amorphous silicon layer 12 made as islands. On the first gate insulation film 15 having stacked gate insulation film 16 and metal wiring layer, after etching the metal wiring layer to form gate electrode 17, the second gate insulation film 16 and the first gate insulation film 15 are etched, for patterning of the gate insulation film. Inside the amorphous silicon layer exposed by previous works, using the gate electrode 17 as mask for ion doping and laser lighting, to polycrystallize this portion to form the source region 13 and the discharge electrode 14.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8159682A JPH1012882A (en) | 1996-06-20 | 1996-06-20 | Thin film transistor and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
TW366596B true TW366596B (en) | 1999-08-11 |
Family
ID=15699028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086108335A TW366596B (en) | 1996-06-20 | 1997-06-16 | Thin-film transistor and the manufacturing method |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH1012882A (en) |
KR (1) | KR100343307B1 (en) |
TW (1) | TW366596B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI395331B (en) * | 2003-10-13 | 2013-05-01 | Samsung Electronics Co Ltd | Thin film transistor, thin film transistor array panel, and display device |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100645035B1 (en) * | 1998-12-08 | 2007-02-05 | 삼성전자주식회사 | Manufacturing method of thin film transistor for liquid crystal display device |
US6579749B2 (en) | 1998-11-17 | 2003-06-17 | Nec Corporation | Fabrication method and fabrication apparatus for thin film transistor |
KR100709704B1 (en) * | 2000-05-12 | 2007-04-19 | 삼성전자주식회사 | Thin film transistor substrate for liquid crystal display and manufacturing method thereof |
JP4790896B2 (en) * | 2000-05-26 | 2011-10-12 | エーユー オプトロニクス コーポレイション | Manufacturing method and manufacturing apparatus of active matrix device including top gate type TFT |
JP2003188183A (en) | 2001-12-20 | 2003-07-04 | Fujitsu Display Technologies Corp | Thin film transistor, its fabricating method and liquid crystal display |
KR101006439B1 (en) | 2003-11-12 | 2011-01-06 | 삼성전자주식회사 | Method for manufacturing of Thin film transistor array panel |
JP4715149B2 (en) * | 2004-09-30 | 2011-07-06 | ソニー株式会社 | Method for manufacturing thin film semiconductor device |
KR100875432B1 (en) | 2007-05-31 | 2008-12-22 | 삼성모바일디스플레이주식회사 | Method for manufacturing polycrystalline silicon layer, thin film transistor formed using same, method for manufacturing thereof and organic light emitting display device comprising same |
KR100889626B1 (en) | 2007-08-22 | 2009-03-20 | 삼성모바일디스플레이주식회사 | Thin film transistor, fabricating method for the same, organic light emitting diode display device comprising the same, and fabricating method the same |
KR100889627B1 (en) | 2007-08-23 | 2009-03-20 | 삼성모바일디스플레이주식회사 | Thin film transistor, fabricating method for the same, and organic light emitting diode display device comprising the same |
KR100982310B1 (en) | 2008-03-27 | 2010-09-15 | 삼성모바일디스플레이주식회사 | TFT, fabricating methode of the TFT, and organic lighting emitting diode display device comprising the same |
KR100989136B1 (en) | 2008-04-11 | 2010-10-20 | 삼성모바일디스플레이주식회사 | TFT, fabricating methode of the TFT, and organic lighting emitting diode display device comprising the same |
KR101002666B1 (en) | 2008-07-14 | 2010-12-21 | 삼성모바일디스플레이주식회사 | Thin film transistor, fabricating methode of the same, and organic lighting emitting diode display device comprising the same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS639978A (en) * | 1986-06-30 | 1988-01-16 | Nec Corp | Manufacture of thin-film transistor |
JPS6435958A (en) * | 1987-07-30 | 1989-02-07 | Ricoh Kk | Thin film transistor |
JP2553704B2 (en) * | 1989-06-16 | 1996-11-13 | 松下電子工業株式会社 | Method for manufacturing semiconductor device |
JPH0442577A (en) * | 1990-06-08 | 1992-02-13 | Seiko Epson Corp | Thin film transistor |
JP3057770B2 (en) * | 1991-01-25 | 2000-07-04 | セイコーエプソン株式会社 | Method for manufacturing thin film transistor |
JPH04328872A (en) * | 1991-04-26 | 1992-11-17 | A G Technol Kk | Manufacture of polycrystalline thin film transistor and polycrystalline thin film transistor |
JPH0520616A (en) * | 1991-07-12 | 1993-01-29 | Matsushita Electric Ind Co Ltd | Write compensation circuit for floppy disk |
JPH05206165A (en) * | 1992-01-24 | 1993-08-13 | Fuji Xerox Co Ltd | Thin film transistor and manufacture thereof |
JP3030367B2 (en) * | 1993-07-20 | 2000-04-10 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method thereof |
JPH07115201A (en) * | 1993-10-15 | 1995-05-02 | Sharp Corp | Apparatus for manufacturing thin film transistor |
-
1996
- 1996-06-20 JP JP8159682A patent/JPH1012882A/en active Pending
-
1997
- 1997-06-16 TW TW086108335A patent/TW366596B/en active
- 1997-06-20 KR KR1019970026987A patent/KR100343307B1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI395331B (en) * | 2003-10-13 | 2013-05-01 | Samsung Electronics Co Ltd | Thin film transistor, thin film transistor array panel, and display device |
Also Published As
Publication number | Publication date |
---|---|
KR100343307B1 (en) | 2002-08-22 |
KR980006531A (en) | 1998-03-30 |
JPH1012882A (en) | 1998-01-16 |
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