KR970013116A

KR970013116A - Manufacturing method of semiconductor device

Info

Publication number: KR970013116A
Application number: KR1019950026845A
Authority: KR
Inventors: 이동덕
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1995-08-28
Filing date: 1995-08-28
Publication date: 1997-03-29

Abstract

본 발명은 LDD 구조를 갖는 반도체 소자 제조 방법에 관한 것으로 게이트 전극 측벽에 경도가 높은 카본 스페이서를 형성하고, 카본 스페이서와 게이트 전극을 마스트로 이용하여 반도체 기판에 고종도확산영역을 형성하는 방법이다. 그로인하여 접합의 누설전류와 디램의 리프레쉬 특성 열화를 방지하고, 공정제어가 용이하다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device having an LDD structure, wherein a carbon spacer having high hardness is formed on sidewalls of a gate electrode, and a high-diffusion diffusion region is formed on a semiconductor substrate using the carbon spacer and the gate electrode as a mask. This prevents the leakage current of the junction and the deterioration of the refresh characteristics of the DRAM and facilitates process control.

Description

Manufacturing method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도 내지 제4도는 본 발명의 실시예에 따라 LDD MOSFET를 제조하는 단계를 도시한 단면도1 through 4 are cross-sectional views illustrating steps of fabricating an LDD MOSFET in accordance with an embodiment of the present invention.

Claims

A MOSFET device having an LDD structure, comprising: forming a gate oxide film and a gate electrode on an upper portion of a semiconductor substrate, forming an insulating layer on an upper portion of the entire structure, and implanting low concentration ions into the semiconductor substrate using the gate electrode as a mask; Forming an LDD region, depositing amorphous carbon having good hardness over the entire structure, and anisotropically etching to form a carbon spacer on the sidewall of the gate electrode, and forming the carbon spacer and the gate electrode as a basal substrate. Forming a high concentration diffusion region for source / drain by implanting high concentration ions; and removing the carbon spacers by etching them.

The method of claim 1, wherein the amorphous carbon is deposited by a sputtering method.

The method of claim 1, wherein the anisotropic etching of the amorphous carbon uses a low pressure of 10 m Torr or less and an O ₂ / Ar or O ₂ / CO gas system.

The method of claim 1, wherein the carbon spacer is removed by wet etching.

The method of claim 1, wherein the removing of the carbon spacer comprises using a gas system including a pressure of 10 m Torr or more and O ₂ as a plasma etching equipment.

The method of claim 1, wherein the insulating layer is deposited to a maximum thickness of 200 μm.

The method of claim 1, wherein the carbon spacer has an etching selectivity of about 50: 1 with respect to the insulating film.