JPS5285489A - Semiconductor reactance element - Google Patents

Semiconductor reactance element

Info

Publication number
JPS5285489A
JPS5285489A JP154776A JP154776A JPS5285489A JP S5285489 A JPS5285489 A JP S5285489A JP 154776 A JP154776 A JP 154776A JP 154776 A JP154776 A JP 154776A JP S5285489 A JPS5285489 A JP S5285489A
Authority
JP
Japan
Prior art keywords
semiconductor
reactance element
reactance
depressions
slopes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP154776A
Other languages
Japanese (ja)
Inventor
Kazuo Hoya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP154776A priority Critical patent/JPS5285489A/en
Publication of JPS5285489A publication Critical patent/JPS5285489A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind

Abstract

PURPOSE:A monolithic circuit including reactance is realized by using the slopes of the depressions or grooves formed in a silicon crystal substrate by anisotropic etching.
JP154776A 1976-01-09 1976-01-09 Semiconductor reactance element Pending JPS5285489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP154776A JPS5285489A (en) 1976-01-09 1976-01-09 Semiconductor reactance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP154776A JPS5285489A (en) 1976-01-09 1976-01-09 Semiconductor reactance element

Publications (1)

Publication Number Publication Date
JPS5285489A true JPS5285489A (en) 1977-07-15

Family

ID=11504537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP154776A Pending JPS5285489A (en) 1976-01-09 1976-01-09 Semiconductor reactance element

Country Status (1)

Country Link
JP (1) JPS5285489A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0653414A (en) * 1992-07-31 1994-02-25 Mitsubishi Electric Corp Microwave integrated circuit
JP2009124112A (en) * 2007-10-24 2009-06-04 Denso Corp Semiconductor device and method of manufacturing the same
JP2019537268A (en) * 2016-11-24 2019-12-19 ムラタ インテグレイテッド パッシブ ソリューションズ Integrated electronic components suitable for broadband bias

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0653414A (en) * 1992-07-31 1994-02-25 Mitsubishi Electric Corp Microwave integrated circuit
JP2009124112A (en) * 2007-10-24 2009-06-04 Denso Corp Semiconductor device and method of manufacturing the same
JP4600563B2 (en) * 2007-10-24 2010-12-15 株式会社デンソー Semiconductor device and manufacturing method thereof
JP2019537268A (en) * 2016-11-24 2019-12-19 ムラタ インテグレイテッド パッシブ ソリューションズ Integrated electronic components suitable for broadband bias

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