JPS5593251A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5593251A
JPS5593251A JP16581978A JP16581978A JPS5593251A JP S5593251 A JPS5593251 A JP S5593251A JP 16581978 A JP16581978 A JP 16581978A JP 16581978 A JP16581978 A JP 16581978A JP S5593251 A JPS5593251 A JP S5593251A
Authority
JP
Japan
Prior art keywords
layer
sio
substrate
integration
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16581978A
Other languages
Japanese (ja)
Inventor
Motoo Nakano
Haruhisa Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16581978A priority Critical patent/JPS5593251A/en
Publication of JPS5593251A publication Critical patent/JPS5593251A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To accomplish high integration restricting plane spread, by solidly forming resistors on a semiconductor substrate through special means.
CONSTITUTION: An n+-layer 1A is formed by maksing an ooening in SiO2 film 2 on p-type silicon substrate 1 to constitute polysilicon wiring layer 3. In addition, SiO2 layer 4 is laminated one over the other with proper masking provided. Then a high dose of metal element or semiconductor elements is selectively injected, so that high-resistance modified layer part 5 of affected quality is formed. In this way, high resistance is constituted in vertical direction against the substrate 1 with its area extremely small. For this reason, the degree of integration is enhanced.
COPYRIGHT: (C)1980,JPO&Japio
JP16581978A 1978-12-30 1978-12-30 Manufacture of semiconductor device Pending JPS5593251A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16581978A JPS5593251A (en) 1978-12-30 1978-12-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16581978A JPS5593251A (en) 1978-12-30 1978-12-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5593251A true JPS5593251A (en) 1980-07-15

Family

ID=15819590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16581978A Pending JPS5593251A (en) 1978-12-30 1978-12-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5593251A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55165670A (en) * 1979-06-12 1980-12-24 Toshiba Corp Semiconductor device
JPS58105562A (en) * 1981-12-17 1983-06-23 Matsushita Electric Ind Co Ltd Semiconductor device
JPS58135662A (en) * 1982-02-08 1983-08-12 Seiko Epson Corp Integrated circuit
JPH0330466A (en) * 1989-06-28 1991-02-08 Matsushita Electron Corp Manufacture of semiconductor device
JPH04365370A (en) * 1991-06-13 1992-12-17 Nec Corp Semiconductor integrated circuit
US5294560A (en) * 1989-01-13 1994-03-15 Seiko Epson Corporation Bidirectional nonlinear resistor, active matrix liquid crystal panel using bidirectional nonlinear resistor, and method for production thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55165670A (en) * 1979-06-12 1980-12-24 Toshiba Corp Semiconductor device
JPS58105562A (en) * 1981-12-17 1983-06-23 Matsushita Electric Ind Co Ltd Semiconductor device
JPS58135662A (en) * 1982-02-08 1983-08-12 Seiko Epson Corp Integrated circuit
JPH0454386B2 (en) * 1982-02-08 1992-08-31 Seiko Epson Corp
US5294560A (en) * 1989-01-13 1994-03-15 Seiko Epson Corporation Bidirectional nonlinear resistor, active matrix liquid crystal panel using bidirectional nonlinear resistor, and method for production thereof
JPH0330466A (en) * 1989-06-28 1991-02-08 Matsushita Electron Corp Manufacture of semiconductor device
JPH04365370A (en) * 1991-06-13 1992-12-17 Nec Corp Semiconductor integrated circuit

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