JPS5593251A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5593251A JPS5593251A JP16581978A JP16581978A JPS5593251A JP S5593251 A JPS5593251 A JP S5593251A JP 16581978 A JP16581978 A JP 16581978A JP 16581978 A JP16581978 A JP 16581978A JP S5593251 A JPS5593251 A JP S5593251A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sio
- substrate
- integration
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE: To accomplish high integration restricting plane spread, by solidly forming resistors on a semiconductor substrate through special means.
CONSTITUTION: An n+-layer 1A is formed by maksing an ooening in SiO2 film 2 on p-type silicon substrate 1 to constitute polysilicon wiring layer 3. In addition, SiO2 layer 4 is laminated one over the other with proper masking provided. Then a high dose of metal element or semiconductor elements is selectively injected, so that high-resistance modified layer part 5 of affected quality is formed. In this way, high resistance is constituted in vertical direction against the substrate 1 with its area extremely small. For this reason, the degree of integration is enhanced.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16581978A JPS5593251A (en) | 1978-12-30 | 1978-12-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16581978A JPS5593251A (en) | 1978-12-30 | 1978-12-30 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5593251A true JPS5593251A (en) | 1980-07-15 |
Family
ID=15819590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16581978A Pending JPS5593251A (en) | 1978-12-30 | 1978-12-30 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5593251A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55165670A (en) * | 1979-06-12 | 1980-12-24 | Toshiba Corp | Semiconductor device |
JPS58105562A (en) * | 1981-12-17 | 1983-06-23 | Matsushita Electric Ind Co Ltd | Semiconductor device |
JPS58135662A (en) * | 1982-02-08 | 1983-08-12 | Seiko Epson Corp | Integrated circuit |
JPH0330466A (en) * | 1989-06-28 | 1991-02-08 | Matsushita Electron Corp | Manufacture of semiconductor device |
JPH04365370A (en) * | 1991-06-13 | 1992-12-17 | Nec Corp | Semiconductor integrated circuit |
US5294560A (en) * | 1989-01-13 | 1994-03-15 | Seiko Epson Corporation | Bidirectional nonlinear resistor, active matrix liquid crystal panel using bidirectional nonlinear resistor, and method for production thereof |
-
1978
- 1978-12-30 JP JP16581978A patent/JPS5593251A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55165670A (en) * | 1979-06-12 | 1980-12-24 | Toshiba Corp | Semiconductor device |
JPS58105562A (en) * | 1981-12-17 | 1983-06-23 | Matsushita Electric Ind Co Ltd | Semiconductor device |
JPS58135662A (en) * | 1982-02-08 | 1983-08-12 | Seiko Epson Corp | Integrated circuit |
JPH0454386B2 (en) * | 1982-02-08 | 1992-08-31 | Seiko Epson Corp | |
US5294560A (en) * | 1989-01-13 | 1994-03-15 | Seiko Epson Corporation | Bidirectional nonlinear resistor, active matrix liquid crystal panel using bidirectional nonlinear resistor, and method for production thereof |
JPH0330466A (en) * | 1989-06-28 | 1991-02-08 | Matsushita Electron Corp | Manufacture of semiconductor device |
JPH04365370A (en) * | 1991-06-13 | 1992-12-17 | Nec Corp | Semiconductor integrated circuit |
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