JPS54109794A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54109794A JPS54109794A JP1648878A JP1648878A JPS54109794A JP S54109794 A JPS54109794 A JP S54109794A JP 1648878 A JP1648878 A JP 1648878A JP 1648878 A JP1648878 A JP 1648878A JP S54109794 A JPS54109794 A JP S54109794A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- layer
- island
- poly
- phosphorus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To form the 2nd rsistance wiring through the insulator thin film by forming the island-shaped poly Si layer on the insulator thick and thin films on the Si substrate and changing the island-shaped layer into the 1st resistance wiring via injection of the ion.
CONSTITUTION: SiO2 thick film 2 and thin film 3 are formed selectively on p-type Si substrate 1 and then covered with the poly Si, and island layer 4 is formed through the selective etching. Then the phosphorus ion is injected to form high- resistance gate 4a', n--type high-resistance layer 5a and 5b, high-resistance wiring 4b' and 4c', and high-resistance layer 5c and 5d respectively. Then CVDSiO2 mask 6a and 6b are formed selectively, and the n+-layer is formed through the phosphorus diffusion. At the same time, the phosphorus is added partially to the high- resistance poly Si layer to obtain n-channel FET at region I, resistance layer 4b' of about 30Ω/cm2 and high-resistance layer 4c' of several GΩ/cm2 at resion II, and diffusion resistance 5c' of about 15Ω/cm2 and high resistance 5d of KΩ/cm2 at region III respectively. Thus, the four types of resistance are obtained in this constitution, which is advantageous for the layout of the circuit design.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1648878A JPS54109794A (en) | 1978-02-17 | 1978-02-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1648878A JPS54109794A (en) | 1978-02-17 | 1978-02-17 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54109794A true JPS54109794A (en) | 1979-08-28 |
Family
ID=11917667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1648878A Pending JPS54109794A (en) | 1978-02-17 | 1978-02-17 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54109794A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01235369A (en) * | 1988-03-16 | 1989-09-20 | Hitachi Ltd | Integrated-circuit semiconductor device |
-
1978
- 1978-02-17 JP JP1648878A patent/JPS54109794A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01235369A (en) * | 1988-03-16 | 1989-09-20 | Hitachi Ltd | Integrated-circuit semiconductor device |
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