JPS55125645A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS55125645A JPS55125645A JP3300179A JP3300179A JPS55125645A JP S55125645 A JPS55125645 A JP S55125645A JP 3300179 A JP3300179 A JP 3300179A JP 3300179 A JP3300179 A JP 3300179A JP S55125645 A JPS55125645 A JP S55125645A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- layer
- openings
- poly
- aluminum layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a miniaturized high-precision resistor element by forming on a semiconductor substrate an insulating layer having a connection bore, laminating no- additive type poly-Si layers and an aluminum layer on the insulating layer, forming electrode wires by patterning, and selectively removing the aluminum layer. CONSTITUTION:A field oxide film 12 and a gate oxide film 13 are formed on a p-type Si substrate 11. Poly-Si layers 141, 142 are provided, and openings are made in the film 13. P is diffused into the openings to form n<+>-layers 15, 16 and set the resistance of the poly-Si layers 141, 142 to a low level. A CVDSiO2 film 17 is formed, and openings are selectively made therein. A no-additive type poly-Si layer 18 and an aluminum layer 19 to which approximately 1% Si is added are formed in layers. The layers 19, 18 are etched in the mentioned order to make openings therein and form electrodes 191, 192 in the layers 15, 16 and a wire 193 which is to be connected to the wire 142. A part of the aluminum layer 192 is selectively removed to expose a part of a Si layer 182 and form a resistor element R having electrodes 1921, 1922. According to this method, a miniaturized, high-precision resistor element having a high resistance and a high controllability can be integrated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3300179A JPS55125645A (en) | 1979-03-20 | 1979-03-20 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3300179A JPS55125645A (en) | 1979-03-20 | 1979-03-20 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55125645A true JPS55125645A (en) | 1980-09-27 |
Family
ID=12374600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3300179A Pending JPS55125645A (en) | 1979-03-20 | 1979-03-20 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55125645A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6196750A (en) * | 1984-10-17 | 1986-05-15 | Oki Electric Ind Co Ltd | Wiring structure for semiconductor device |
| JPH0258259A (en) * | 1988-08-24 | 1990-02-27 | Nippon Denso Co Ltd | Manufacture of semiconductor device |
| US6046491A (en) * | 1996-02-19 | 2000-04-04 | Nec Corporation | Semiconductor resistor element having improved resistance tolerance and semiconductor device therefor |
-
1979
- 1979-03-20 JP JP3300179A patent/JPS55125645A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6196750A (en) * | 1984-10-17 | 1986-05-15 | Oki Electric Ind Co Ltd | Wiring structure for semiconductor device |
| JPH0258259A (en) * | 1988-08-24 | 1990-02-27 | Nippon Denso Co Ltd | Manufacture of semiconductor device |
| US6046491A (en) * | 1996-02-19 | 2000-04-04 | Nec Corporation | Semiconductor resistor element having improved resistance tolerance and semiconductor device therefor |
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