JPS572530A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS572530A
JPS572530A JP7646180A JP7646180A JPS572530A JP S572530 A JPS572530 A JP S572530A JP 7646180 A JP7646180 A JP 7646180A JP 7646180 A JP7646180 A JP 7646180A JP S572530 A JPS572530 A JP S572530A
Authority
JP
Japan
Prior art keywords
insulating film
defective part
semiconductor device
oxide
anodic oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7646180A
Other languages
Japanese (ja)
Inventor
Keimei Mikoshiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7646180A priority Critical patent/JPS572530A/en
Publication of JPS572530A publication Critical patent/JPS572530A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To enhance the dielectric strength of an insulating film in a semiconductor device by performing the anodic oxidation of a semiconductor substrate on which the insulating film having a defective part is formed on the surface, thereby forming an oxide on the defective part. CONSTITUTION:When a defective part, e.g., a pinhole 3, a weak spot 4, a foregin material 5 or the like exists on an insulating film 2 formed on a semiconductor substrate 1, an anodic oxidation is performed, and an oxide with the substrate is reacted and produced at the refective part via a current flowing through the defective part in the insulation breakdown state. Thus, it can reasily form an insulating film having a necessary dielectric strength.
JP7646180A 1980-06-06 1980-06-06 Manufacture of semiconductor device Pending JPS572530A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7646180A JPS572530A (en) 1980-06-06 1980-06-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7646180A JPS572530A (en) 1980-06-06 1980-06-06 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS572530A true JPS572530A (en) 1982-01-07

Family

ID=13605795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7646180A Pending JPS572530A (en) 1980-06-06 1980-06-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS572530A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5843528A (en) * 1981-08-24 1983-03-14 フエアチヤイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン Method of self-reparing insulating film
US5877083A (en) * 1994-11-01 1999-03-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5843528A (en) * 1981-08-24 1983-03-14 フエアチヤイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン Method of self-reparing insulating film
US5877083A (en) * 1994-11-01 1999-03-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device

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