JPS572530A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS572530A JPS572530A JP7646180A JP7646180A JPS572530A JP S572530 A JPS572530 A JP S572530A JP 7646180 A JP7646180 A JP 7646180A JP 7646180 A JP7646180 A JP 7646180A JP S572530 A JPS572530 A JP S572530A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- defective part
- semiconductor device
- oxide
- anodic oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To enhance the dielectric strength of an insulating film in a semiconductor device by performing the anodic oxidation of a semiconductor substrate on which the insulating film having a defective part is formed on the surface, thereby forming an oxide on the defective part. CONSTITUTION:When a defective part, e.g., a pinhole 3, a weak spot 4, a foregin material 5 or the like exists on an insulating film 2 formed on a semiconductor substrate 1, an anodic oxidation is performed, and an oxide with the substrate is reacted and produced at the refective part via a current flowing through the defective part in the insulation breakdown state. Thus, it can reasily form an insulating film having a necessary dielectric strength.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7646180A JPS572530A (en) | 1980-06-06 | 1980-06-06 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7646180A JPS572530A (en) | 1980-06-06 | 1980-06-06 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS572530A true JPS572530A (en) | 1982-01-07 |
Family
ID=13605795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7646180A Pending JPS572530A (en) | 1980-06-06 | 1980-06-06 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS572530A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5843528A (en) * | 1981-08-24 | 1983-03-14 | フエアチヤイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン | Method of self-reparing insulating film |
US5877083A (en) * | 1994-11-01 | 1999-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
-
1980
- 1980-06-06 JP JP7646180A patent/JPS572530A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5843528A (en) * | 1981-08-24 | 1983-03-14 | フエアチヤイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン | Method of self-reparing insulating film |
US5877083A (en) * | 1994-11-01 | 1999-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
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