JPS55160392A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS55160392A
JPS55160392A JP6642479A JP6642479A JPS55160392A JP S55160392 A JPS55160392 A JP S55160392A JP 6642479 A JP6642479 A JP 6642479A JP 6642479 A JP6642479 A JP 6642479A JP S55160392 A JPS55160392 A JP S55160392A
Authority
JP
Japan
Prior art keywords
mosfets
ram
contacts
semiconductor memory
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6642479A
Other languages
Japanese (ja)
Inventor
Eiji Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6642479A priority Critical patent/JPS55160392A/en
Publication of JPS55160392A publication Critical patent/JPS55160392A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory

Abstract

PURPOSE:To make it possible to use memory cells of RAM, formed of MOSFETs, as RAM or ROM according to the make or break states of contacts provided to the memory cells. CONSTITUTION:By using MOSFETs 1 and 2 as inverters and MOSFETs 3 and 4 as load resistances, an FF circuit is formed and MOSFETs 5 and 6 are coupling elements between the FF circuit and data lines 8 and 9 and serve as read and write gates. Then, contacts 12 and 13 are provided to gates of FETs 1 and 2. The memory cell of RAM formed in this way can be used as RAM with contacts 12 and 13 broken or as ROM with either of contacts 12 and 13 made.
JP6642479A 1979-05-28 1979-05-28 Semiconductor memory Pending JPS55160392A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6642479A JPS55160392A (en) 1979-05-28 1979-05-28 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6642479A JPS55160392A (en) 1979-05-28 1979-05-28 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS55160392A true JPS55160392A (en) 1980-12-13

Family

ID=13315387

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6642479A Pending JPS55160392A (en) 1979-05-28 1979-05-28 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS55160392A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59225615A (en) * 1983-06-06 1984-12-18 Nec Corp Method for constituting ram in gate array
JPS63128663A (en) * 1986-11-18 1988-06-01 Nec Corp Memory
JPS63177395A (en) * 1987-01-19 1988-07-21 Ricoh Co Ltd Gate array system semiconductor integrated circuit device
JPS63263691A (en) * 1987-04-21 1988-10-31 Hitachi Ltd Composite memory device
EP0460691A2 (en) * 1990-06-08 1991-12-11 Kabushiki Kaisha Toshiba Semiconductor memory cell
US5086331A (en) * 1988-04-05 1992-02-04 U.S. Philips Corp. Integrated circuit comprising a programmable cell

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59225615A (en) * 1983-06-06 1984-12-18 Nec Corp Method for constituting ram in gate array
JPS63128663A (en) * 1986-11-18 1988-06-01 Nec Corp Memory
JPS63177395A (en) * 1987-01-19 1988-07-21 Ricoh Co Ltd Gate array system semiconductor integrated circuit device
JPS63263691A (en) * 1987-04-21 1988-10-31 Hitachi Ltd Composite memory device
US5086331A (en) * 1988-04-05 1992-02-04 U.S. Philips Corp. Integrated circuit comprising a programmable cell
EP0460691A2 (en) * 1990-06-08 1991-12-11 Kabushiki Kaisha Toshiba Semiconductor memory cell
US5311464A (en) * 1990-06-08 1994-05-10 Kabushiki Kaisha Toshiba Semiconductor memory cell farming a ROM cell from a RAM cell

Similar Documents

Publication Publication Date Title
JPS5564686A (en) Memory unit
EP0107387A3 (en) Semiconductor memory device
JPS55160392A (en) Semiconductor memory
JPS5314525A (en) Memory circuit
EP0027565A3 (en) Dynamic memory cell with two complementary bipolar transistors
JPS5220732A (en) Memory circuit
FI864263A (en) FOER BREDBANDSSIGNALER AVSEDD RYMDKOPPLINGSANORDNING.
JPS54137246A (en) Memory unit
JPS54109729A (en) Memory circuit
JPS5782288A (en) Dynamic memory
JPS56137581A (en) Random access memory circuit
JPS549565A (en) Terminating circuit
JPS5353281A (en) Semiconductor integrating circuit
GB2002129A (en) Apparatus for testing semiconductor memories
JPS5278327A (en) Semiconductor memory
JPS53124039A (en) Nonvolatile memory device
JPS57162181A (en) Semiconductor memory device
JPS5641586A (en) Memory readout circuit
JPS57200992A (en) Memory circuit
JPS52141590A (en) Semiconductor memory cell
JPS52155927A (en) Mos random access memory
JPS578991A (en) Memory cell
JPS5694584A (en) Cmos random access memory
JPS57158087A (en) Semiconductor memory cell
JPS52125244A (en) Memory circuit