JPS5745948A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS5745948A JPS5745948A JP55121526A JP12152680A JPS5745948A JP S5745948 A JPS5745948 A JP S5745948A JP 55121526 A JP55121526 A JP 55121526A JP 12152680 A JP12152680 A JP 12152680A JP S5745948 A JPS5745948 A JP S5745948A
- Authority
- JP
- Japan
- Prior art keywords
- type
- well
- layers
- gates
- power source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain an IC having basic cells which can readily perform a circuit that cannot be performed by a conventional master slice type by independently forming a part of a gate electrode of a complementary MISFET. CONSTITUTION:P type layers 21-24 are formed on an N type Si substrate, and are connected to form 3 P-channel MISFET TR1-TR3. A P type power source line VD is passed underneath the layers 21-24 without contact with the layers. A P type well is formed adjacently to the TR1-TR3, N type layers 25-28 are formed at an interval in the well, and are connected to form 3 N-channel MISFET TR4- TR6. A P type power source line VS passing underneath the P-well without contact with the well is formed, and the P-well is shortcircuited via the P type layer with the line VS. The gates of the TR3 and TR6 are connected via lines 207 and the other gates are independent. Connecting windows 201, 202, 206 and 208 forming the buried wire 208 of polysilicon are formed at the side of the FET as unit cells. When the IC including the unit cells are used for the master slice, a complicate circuit can be extremely readily wired.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55121526A JPS5745948A (en) | 1980-09-02 | 1980-09-02 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55121526A JPS5745948A (en) | 1980-09-02 | 1980-09-02 | Semiconductor integrated circuit device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63099777A Division JPS63296240A (en) | 1988-04-22 | 1988-04-22 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5745948A true JPS5745948A (en) | 1982-03-16 |
JPH0113223B2 JPH0113223B2 (en) | 1989-03-03 |
Family
ID=14813400
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55121526A Granted JPS5745948A (en) | 1980-09-02 | 1980-09-02 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5745948A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5749253A (en) * | 1980-09-09 | 1982-03-23 | Toshiba Corp | Semiconductor integrated circuit |
JPS5944843A (en) * | 1982-09-07 | 1984-03-13 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
JPS6074549A (en) * | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | Semiconductor device |
US5512847A (en) * | 1983-01-31 | 1996-04-30 | Hitachi, Ltd. | BiCMOS tri-state output driver |
US6399972B1 (en) * | 2000-03-13 | 2002-06-04 | Oki Electric Industry Co., Ltd. | Cell based integrated circuit and unit cell architecture therefor |
JP2010103185A (en) * | 2008-10-21 | 2010-05-06 | Nec Corp | Cell-data generating method in semiconductor integrated circuit and design method for semiconductor integrated circuit |
WO2019064607A1 (en) | 2017-09-30 | 2019-04-04 | 朝日インテック株式会社 | Guide wire |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5363877A (en) * | 1976-11-18 | 1978-06-07 | Fujitsu Ltd | Production of semiconductor device |
JPS541725A (en) * | 1977-06-07 | 1979-01-08 | Kitamura Shuichi | Variable venturi carbureter |
JPS541724A (en) * | 1977-05-31 | 1979-01-08 | Bendix Corp | Dual mode hybrid controller for controlling operation of electronic type fuel injector of internal combustion engine that can be operated at various kinds of speed of revolution |
-
1980
- 1980-09-02 JP JP55121526A patent/JPS5745948A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5363877A (en) * | 1976-11-18 | 1978-06-07 | Fujitsu Ltd | Production of semiconductor device |
JPS541724A (en) * | 1977-05-31 | 1979-01-08 | Bendix Corp | Dual mode hybrid controller for controlling operation of electronic type fuel injector of internal combustion engine that can be operated at various kinds of speed of revolution |
JPS541725A (en) * | 1977-06-07 | 1979-01-08 | Kitamura Shuichi | Variable venturi carbureter |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5749253A (en) * | 1980-09-09 | 1982-03-23 | Toshiba Corp | Semiconductor integrated circuit |
JPH0253949B2 (en) * | 1980-09-09 | 1990-11-20 | Tokyo Shibaura Electric Co | |
JPS5944843A (en) * | 1982-09-07 | 1984-03-13 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
US5512847A (en) * | 1983-01-31 | 1996-04-30 | Hitachi, Ltd. | BiCMOS tri-state output driver |
JPS6074549A (en) * | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | Semiconductor device |
US6399972B1 (en) * | 2000-03-13 | 2002-06-04 | Oki Electric Industry Co., Ltd. | Cell based integrated circuit and unit cell architecture therefor |
US6905931B2 (en) | 2000-03-13 | 2005-06-14 | Oki Electric Industry Co., Ltd. | Cell based integrated circuit and unit cell architecture therefor |
US7422945B2 (en) | 2000-03-13 | 2008-09-09 | Oki Electric Industry Co., Ltd. | Cell based integrated circuit and unit cell architecture therefor |
US7704837B2 (en) | 2000-03-13 | 2010-04-27 | Oki Semiconductor Co., Ltd. | Cell based integrated circuit and unit cell architecture therefor |
JP2010103185A (en) * | 2008-10-21 | 2010-05-06 | Nec Corp | Cell-data generating method in semiconductor integrated circuit and design method for semiconductor integrated circuit |
WO2019064607A1 (en) | 2017-09-30 | 2019-04-04 | 朝日インテック株式会社 | Guide wire |
EP4059557A2 (en) | 2017-09-30 | 2022-09-21 | Asahi Intecc Co., Ltd. | Guide wire |
Also Published As
Publication number | Publication date |
---|---|
JPH0113223B2 (en) | 1989-03-03 |
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