JPS5544743A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5544743A
JPS5544743A JP11819678A JP11819678A JPS5544743A JP S5544743 A JPS5544743 A JP S5544743A JP 11819678 A JP11819678 A JP 11819678A JP 11819678 A JP11819678 A JP 11819678A JP S5544743 A JPS5544743 A JP S5544743A
Authority
JP
Japan
Prior art keywords
substrate
polycrystal
bringing
isolation
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11819678A
Other languages
Japanese (ja)
Inventor
Yunosuke Kawabe
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11819678A priority Critical patent/JPS5544743A/en
Publication of JPS5544743A publication Critical patent/JPS5544743A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve reliability on the action of an integration circuit, by perfecting the isolation of element surfaces by bringing a polycrystal Si portion and a semiconductor substrate to the same potential as the semiconductor substrate by electrically conduction connecting both. CONSTITUTION:A polycrystal Si portion 12 in a V-shaped groove is changed into a conductor by doping impurities to the Si portion 12, and the Si portion 12 and a Si substrate 1 are electrically conduction connected, thus bringing the Si portion 12 and the Si substrate 1 to the same potential. Consequenctly, reliability on the action of an integration circuit can be advanced because channels are not produced in the substrate 1 and the isolation of element surfaces can be made perfect.
JP11819678A 1978-09-26 1978-09-26 Manufacture of semiconductor device Pending JPS5544743A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11819678A JPS5544743A (en) 1978-09-26 1978-09-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11819678A JPS5544743A (en) 1978-09-26 1978-09-26 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5544743A true JPS5544743A (en) 1980-03-29

Family

ID=14730538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11819678A Pending JPS5544743A (en) 1978-09-26 1978-09-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5544743A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5830142A (en) * 1981-08-17 1983-02-22 Fujitsu Ltd Mamufacture of semiconductor device
JPS5896751A (en) * 1981-12-03 1983-06-08 Seiko Epson Corp Semiconductor device
JPS58116749A (en) * 1981-12-30 1983-07-12 Fujitsu Ltd Semiconductor device
JPS58168256A (en) * 1982-03-30 1983-10-04 Fujitsu Ltd Semiconductor device
JPS6143469A (en) * 1984-08-07 1986-03-03 コミツサレ・ア・レナジイ・アトミツク Cmos integrated circuit and method of producing electricallyinsulating region of same circuit
JPS63236343A (en) * 1987-03-25 1988-10-03 Toshiba Corp Manufacture of semiconductor device
JPH04151851A (en) * 1990-10-15 1992-05-25 Mitsubishi Electric Corp Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940687A (en) * 1972-08-23 1974-04-16
JPS53147481A (en) * 1977-05-27 1978-12-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and production of the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940687A (en) * 1972-08-23 1974-04-16
JPS53147481A (en) * 1977-05-27 1978-12-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and production of the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5830142A (en) * 1981-08-17 1983-02-22 Fujitsu Ltd Mamufacture of semiconductor device
JPS5896751A (en) * 1981-12-03 1983-06-08 Seiko Epson Corp Semiconductor device
JPS58116749A (en) * 1981-12-30 1983-07-12 Fujitsu Ltd Semiconductor device
JPS58168256A (en) * 1982-03-30 1983-10-04 Fujitsu Ltd Semiconductor device
JPH0336303B2 (en) * 1982-03-30 1991-05-31 Fujitsu Ltd
JPS6143469A (en) * 1984-08-07 1986-03-03 コミツサレ・ア・レナジイ・アトミツク Cmos integrated circuit and method of producing electricallyinsulating region of same circuit
JPS63236343A (en) * 1987-03-25 1988-10-03 Toshiba Corp Manufacture of semiconductor device
JPH04151851A (en) * 1990-10-15 1992-05-25 Mitsubishi Electric Corp Semiconductor device

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