JPS5678127A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5678127A JPS5678127A JP15430479A JP15430479A JPS5678127A JP S5678127 A JPS5678127 A JP S5678127A JP 15430479 A JP15430479 A JP 15430479A JP 15430479 A JP15430479 A JP 15430479A JP S5678127 A JPS5678127 A JP S5678127A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor device
- diffused
- lifetime
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000005247 gettering Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To improve the characteristics of a power semiconductor device by a method wherein a P is selectively diffused on the surface of an Si substrate having a P-N juntion. CONSTITUTION:The lifetime of the semiconductor device is prolonged by the gettering effect when the P, B and the like are diffused in the Si substrate. In the case of a diode, an SCR and the like, an Au is diffused for the pourpose of reducing an arc extinguishing time. at this time, the diffusion coefficient of the Au contained in the Si substrate varies greatly due to the contents of the impurities in the Si substrate, especially with the N type impurities such as the P, an As and the like. When an N<+> layer 33 and a P layer 32 are superposed on both sides of an N type Si substrate 31, an SiO2 mask 34' is provided on the N<+> layer 33 and the Au is evaporated and diffused, a region having a different lifetime is formed on the flat direction of the Si substrate on the semiconductor device, thereby enabling to obtain a low ion voltage at the high lifetime region and to reduce a switching loss on the low lifetime region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15430479A JPS5678127A (en) | 1979-11-30 | 1979-11-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15430479A JPS5678127A (en) | 1979-11-30 | 1979-11-30 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5678127A true JPS5678127A (en) | 1981-06-26 |
Family
ID=15581190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15430479A Pending JPS5678127A (en) | 1979-11-30 | 1979-11-30 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5678127A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1026754A4 (en) * | 1998-06-01 | 2000-08-09 | Mitsubishi Electric Corp | Diode |
-
1979
- 1979-11-30 JP JP15430479A patent/JPS5678127A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1026754A4 (en) * | 1998-06-01 | 2000-08-09 | Mitsubishi Electric Corp | Diode |
| EP1026754A1 (en) * | 1998-06-01 | 2000-08-09 | Mitsubishi Denki Kabushiki Kaisha | Diode |
| EP1780799A2 (en) * | 1998-06-01 | 2007-05-02 | Mitsubishi Denki Kabushiki Kaisha | Diode |
| EP1780799A3 (en) * | 1998-06-01 | 2008-04-23 | Mitsubishi Denki Kabushiki Kaisha | Diode |
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