JPS5598870A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5598870A
JPS5598870A JP537179A JP537179A JPS5598870A JP S5598870 A JPS5598870 A JP S5598870A JP 537179 A JP537179 A JP 537179A JP 537179 A JP537179 A JP 537179A JP S5598870 A JPS5598870 A JP S5598870A
Authority
JP
Japan
Prior art keywords
layer
gate
depletion
sit
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP537179A
Other languages
Japanese (ja)
Inventor
Junichi Nishizawa
Ikuo Shioda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP537179A priority Critical patent/JPS5598870A/en
Publication of JPS5598870A publication Critical patent/JPS5598870A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices

Abstract

PURPOSE:To obtain a SIT by forming source and drain in desired depth as a highly conductive layer in contact with high conductivity porous layer and controlling the configuration of the porous layer in the shape of a gate depletion layer. CONSTITUTION:An n<->epitaxial layer 2 is formed on an n<+>silicon substrate 1 for drain, a gate layer 4 is selectively formed thereon, and an n<->epitaxial layer is superimposed thereon. Gate layers 4 to 4n are connected internally. When the side surface is protected and the layer 2 is anodized for desired time, the current in the layer 2 is restricted to its passing region at the depletion layer (as designated by broken line) extended from the gate layer but flows through the contact portions among the depletion layers to thus form a porous layer 3'. When P or As is diffused in the layer 3, an n<+> layer may be obtained for extremely short time, and the impurity distribution of the p+gate is not extended. Thereafter, it is heat treated for short time to diffuse the impurity to the monocrystalline layer adjacent to the layer 3 so as to form an n-type layer 3' to thereby form a SIT. Thus, a voltage is intentionally applied between the layer 4 and the layer 2 in addition to the utilization of the natural potential barrier due to the diffusing potential to enable control of the area and shape of the layer 3.
JP537179A 1979-01-19 1979-01-19 Semiconductor device Pending JPS5598870A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP537179A JPS5598870A (en) 1979-01-19 1979-01-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP537179A JPS5598870A (en) 1979-01-19 1979-01-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5598870A true JPS5598870A (en) 1980-07-28

Family

ID=11609302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP537179A Pending JPS5598870A (en) 1979-01-19 1979-01-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5598870A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61119365U (en) * 1985-01-14 1986-07-28
JPH02249279A (en) * 1988-11-11 1990-10-05 Komatsu Ltd Semiconductor device and manufacture thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51145277A (en) * 1975-06-09 1976-12-14 Matsushita Electric Ind Co Ltd Manufacture of silicon crystal substratum
JPS5216188A (en) * 1975-07-29 1977-02-07 Citizen Watch Co Ltd Semiconductor integrated circuit device and its producing method
JPS5368178A (en) * 1976-11-30 1978-06-17 Handotai Kenkyu Shinkokai Fet transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51145277A (en) * 1975-06-09 1976-12-14 Matsushita Electric Ind Co Ltd Manufacture of silicon crystal substratum
JPS5216188A (en) * 1975-07-29 1977-02-07 Citizen Watch Co Ltd Semiconductor integrated circuit device and its producing method
JPS5368178A (en) * 1976-11-30 1978-06-17 Handotai Kenkyu Shinkokai Fet transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61119365U (en) * 1985-01-14 1986-07-28
JPH02249279A (en) * 1988-11-11 1990-10-05 Komatsu Ltd Semiconductor device and manufacture thereof

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