JPS5216188A - Semiconductor integrated circuit device and its producing method - Google Patents

Semiconductor integrated circuit device and its producing method

Info

Publication number
JPS5216188A
JPS5216188A JP50092404A JP9240475A JPS5216188A JP S5216188 A JPS5216188 A JP S5216188A JP 50092404 A JP50092404 A JP 50092404A JP 9240475 A JP9240475 A JP 9240475A JP S5216188 A JPS5216188 A JP S5216188A
Authority
JP
Japan
Prior art keywords
integrated circuit
circuit device
semiconductor integrated
producing method
horizontal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50092404A
Other languages
Japanese (ja)
Inventor
Toshikazu Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP50092404A priority Critical patent/JPS5216188A/en
Publication of JPS5216188A publication Critical patent/JPS5216188A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the mutual-supply type integrated circuit device composed of the vertical type Tr and the horizontal type Tr from generation of a parasite transistor and, further, to remove the reactive injection of electric charge carrier from the emitter region of horizontal (traverse) direction Tr, thus, to improve HFE.
JP50092404A 1975-07-29 1975-07-29 Semiconductor integrated circuit device and its producing method Pending JPS5216188A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50092404A JPS5216188A (en) 1975-07-29 1975-07-29 Semiconductor integrated circuit device and its producing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50092404A JPS5216188A (en) 1975-07-29 1975-07-29 Semiconductor integrated circuit device and its producing method

Publications (1)

Publication Number Publication Date
JPS5216188A true JPS5216188A (en) 1977-02-07

Family

ID=14053468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50092404A Pending JPS5216188A (en) 1975-07-29 1975-07-29 Semiconductor integrated circuit device and its producing method

Country Status (1)

Country Link
JP (1) JPS5216188A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5598870A (en) * 1979-01-19 1980-07-28 Semiconductor Res Found Semiconductor device
JPS55102275A (en) * 1979-01-29 1980-08-05 Semiconductor Res Found Electrostatic induction type semiconductor device
JPS5643760A (en) * 1979-09-18 1981-04-22 Mitsubishi Electric Corp Semiconductor device
JPS58135965U (en) * 1982-03-05 1983-09-13 日本電気ホームエレクトロニクス株式会社 Lateral type transistor element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5049933A (en) * 1973-09-03 1975-05-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5049933A (en) * 1973-09-03 1975-05-06

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5598870A (en) * 1979-01-19 1980-07-28 Semiconductor Res Found Semiconductor device
JPS55102275A (en) * 1979-01-29 1980-08-05 Semiconductor Res Found Electrostatic induction type semiconductor device
JPS5643760A (en) * 1979-09-18 1981-04-22 Mitsubishi Electric Corp Semiconductor device
JPS58135965U (en) * 1982-03-05 1983-09-13 日本電気ホームエレクトロニクス株式会社 Lateral type transistor element

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