JPS5250175A - Electrostatic induction type thyristor - Google Patents

Electrostatic induction type thyristor

Info

Publication number
JPS5250175A
JPS5250175A JP12611175A JP12611175A JPS5250175A JP S5250175 A JPS5250175 A JP S5250175A JP 12611175 A JP12611175 A JP 12611175A JP 12611175 A JP12611175 A JP 12611175A JP S5250175 A JPS5250175 A JP S5250175A
Authority
JP
Japan
Prior art keywords
induction type
electrostatic induction
type thyristor
decreasing
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12611175A
Other languages
Japanese (ja)
Other versions
JPS6132828B2 (en
Inventor
Junichi Nishizawa
Kentaro Nakamura
Takashi Kiregawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI KENKIYUU SHINKOUKAI
Mitsubishi Electric Corp
Semiconductor Research Foundation
Original Assignee
HANDOUTAI KENKIYUU SHINKOUKAI
Mitsubishi Electric Corp
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI KENKIYUU SHINKOUKAI, Mitsubishi Electric Corp, Semiconductor Research Foundation filed Critical HANDOUTAI KENKIYUU SHINKOUKAI
Priority to JP12611175A priority Critical patent/JPS5250175A/en
Priority to US05/733,930 priority patent/US4086611A/en
Priority to US05/760,370 priority patent/US4171995A/en
Publication of JPS5250175A publication Critical patent/JPS5250175A/en
Publication of JPS6132828B2 publication Critical patent/JPS6132828B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain a high speed thyristor which conducts on decreasing in electric field by the mixing state of a multiplicity of holes and electrones produced by abrupt injection of carrier, by decreasing the potential barrier generated in intrinsic semiconductor regions by high impurity density regions.
JP12611175A 1975-10-20 1975-10-20 Electrostatic induction type thyristor Granted JPS5250175A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP12611175A JPS5250175A (en) 1975-10-20 1975-10-20 Electrostatic induction type thyristor
US05/733,930 US4086611A (en) 1975-10-20 1976-10-19 Static induction type thyristor
US05/760,370 US4171995A (en) 1975-10-20 1977-01-18 Epitaxial deposition process for producing an electrostatic induction type thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12611175A JPS5250175A (en) 1975-10-20 1975-10-20 Electrostatic induction type thyristor

Publications (2)

Publication Number Publication Date
JPS5250175A true JPS5250175A (en) 1977-04-21
JPS6132828B2 JPS6132828B2 (en) 1986-07-29

Family

ID=14926888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12611175A Granted JPS5250175A (en) 1975-10-20 1975-10-20 Electrostatic induction type thyristor

Country Status (1)

Country Link
JP (1) JPS5250175A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53143181A (en) * 1977-05-20 1978-12-13 Hitachi Ltd Field effect type thyristor
JPS5651866A (en) * 1979-10-05 1981-05-09 Hitachi Ltd Electric field effect type thyrister and driving method thereof
JPS61198779A (en) * 1985-02-28 1986-09-03 Res Dev Corp Of Japan Electrostatic induction thyristor having gates on both surfaces and manufacture thereof
JP2007324601A (en) * 2006-06-02 2007-12-13 Infineon Technologies Ag Soft switching semiconductor device with high robustness and small switching loss

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1156997A (en) * 1965-10-21 1969-07-02 Bbc Brown Boveri & Cie Improvements in and relating to Controllable Semi-Conductor Devices
JPS4951884A (en) * 1972-06-09 1974-05-20
JPS5012987A (en) * 1973-05-18 1975-02-10

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1156997A (en) * 1965-10-21 1969-07-02 Bbc Brown Boveri & Cie Improvements in and relating to Controllable Semi-Conductor Devices
JPS4951884A (en) * 1972-06-09 1974-05-20
JPS5012987A (en) * 1973-05-18 1975-02-10

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53143181A (en) * 1977-05-20 1978-12-13 Hitachi Ltd Field effect type thyristor
JPS5651866A (en) * 1979-10-05 1981-05-09 Hitachi Ltd Electric field effect type thyrister and driving method thereof
JPS61198779A (en) * 1985-02-28 1986-09-03 Res Dev Corp Of Japan Electrostatic induction thyristor having gates on both surfaces and manufacture thereof
JP2007324601A (en) * 2006-06-02 2007-12-13 Infineon Technologies Ag Soft switching semiconductor device with high robustness and small switching loss

Also Published As

Publication number Publication date
JPS6132828B2 (en) 1986-07-29

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