JPS5250175A - Electrostatic induction type thyristor - Google Patents
Electrostatic induction type thyristorInfo
- Publication number
- JPS5250175A JPS5250175A JP12611175A JP12611175A JPS5250175A JP S5250175 A JPS5250175 A JP S5250175A JP 12611175 A JP12611175 A JP 12611175A JP 12611175 A JP12611175 A JP 12611175A JP S5250175 A JPS5250175 A JP S5250175A
- Authority
- JP
- Japan
- Prior art keywords
- induction type
- electrostatic induction
- type thyristor
- decreasing
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000006698 induction Effects 0.000 title 1
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 241001663154 Electron Species 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000005036 potential barrier Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To obtain a high speed thyristor which conducts on decreasing in electric field by the mixing state of a multiplicity of holes and electrones produced by abrupt injection of carrier, by decreasing the potential barrier generated in intrinsic semiconductor regions by high impurity density regions.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12611175A JPS5250175A (en) | 1975-10-20 | 1975-10-20 | Electrostatic induction type thyristor |
US05/733,930 US4086611A (en) | 1975-10-20 | 1976-10-19 | Static induction type thyristor |
US05/760,370 US4171995A (en) | 1975-10-20 | 1977-01-18 | Epitaxial deposition process for producing an electrostatic induction type thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12611175A JPS5250175A (en) | 1975-10-20 | 1975-10-20 | Electrostatic induction type thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5250175A true JPS5250175A (en) | 1977-04-21 |
JPS6132828B2 JPS6132828B2 (en) | 1986-07-29 |
Family
ID=14926888
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12611175A Granted JPS5250175A (en) | 1975-10-20 | 1975-10-20 | Electrostatic induction type thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5250175A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53143181A (en) * | 1977-05-20 | 1978-12-13 | Hitachi Ltd | Field effect type thyristor |
JPS5651866A (en) * | 1979-10-05 | 1981-05-09 | Hitachi Ltd | Electric field effect type thyrister and driving method thereof |
JPS61198779A (en) * | 1985-02-28 | 1986-09-03 | Res Dev Corp Of Japan | Electrostatic induction thyristor having gates on both surfaces and manufacture thereof |
JP2007324601A (en) * | 2006-06-02 | 2007-12-13 | Infineon Technologies Ag | Soft switching semiconductor device with high robustness and small switching loss |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1156997A (en) * | 1965-10-21 | 1969-07-02 | Bbc Brown Boveri & Cie | Improvements in and relating to Controllable Semi-Conductor Devices |
JPS4951884A (en) * | 1972-06-09 | 1974-05-20 | ||
JPS5012987A (en) * | 1973-05-18 | 1975-02-10 |
-
1975
- 1975-10-20 JP JP12611175A patent/JPS5250175A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1156997A (en) * | 1965-10-21 | 1969-07-02 | Bbc Brown Boveri & Cie | Improvements in and relating to Controllable Semi-Conductor Devices |
JPS4951884A (en) * | 1972-06-09 | 1974-05-20 | ||
JPS5012987A (en) * | 1973-05-18 | 1975-02-10 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53143181A (en) * | 1977-05-20 | 1978-12-13 | Hitachi Ltd | Field effect type thyristor |
JPS5651866A (en) * | 1979-10-05 | 1981-05-09 | Hitachi Ltd | Electric field effect type thyrister and driving method thereof |
JPS61198779A (en) * | 1985-02-28 | 1986-09-03 | Res Dev Corp Of Japan | Electrostatic induction thyristor having gates on both surfaces and manufacture thereof |
JP2007324601A (en) * | 2006-06-02 | 2007-12-13 | Infineon Technologies Ag | Soft switching semiconductor device with high robustness and small switching loss |
Also Published As
Publication number | Publication date |
---|---|
JPS6132828B2 (en) | 1986-07-29 |
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