JPS51142985A - Backward conductive thyristors - Google Patents
Backward conductive thyristorsInfo
- Publication number
- JPS51142985A JPS51142985A JP6648975A JP6648975A JPS51142985A JP S51142985 A JPS51142985 A JP S51142985A JP 6648975 A JP6648975 A JP 6648975A JP 6648975 A JP6648975 A JP 6648975A JP S51142985 A JPS51142985 A JP S51142985A
- Authority
- JP
- Japan
- Prior art keywords
- backward conductive
- conductive thyristors
- thyristors
- backward
- high speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:A high speed and large withstand voltage backward conductive thyristor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6648975A JPS51142985A (en) | 1975-06-04 | 1975-06-04 | Backward conductive thyristors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6648975A JPS51142985A (en) | 1975-06-04 | 1975-06-04 | Backward conductive thyristors |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51142985A true JPS51142985A (en) | 1976-12-08 |
JPS5631749B2 JPS5631749B2 (en) | 1981-07-23 |
Family
ID=13317249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6648975A Granted JPS51142985A (en) | 1975-06-04 | 1975-06-04 | Backward conductive thyristors |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51142985A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49122985A (en) * | 1973-03-26 | 1974-11-25 |
-
1975
- 1975-06-04 JP JP6648975A patent/JPS51142985A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49122985A (en) * | 1973-03-26 | 1974-11-25 |
Also Published As
Publication number | Publication date |
---|---|
JPS5631749B2 (en) | 1981-07-23 |
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