JPS5651866A - Electric field effect type thyrister and driving method thereof - Google Patents
Electric field effect type thyrister and driving method thereofInfo
- Publication number
- JPS5651866A JPS5651866A JP12795779A JP12795779A JPS5651866A JP S5651866 A JPS5651866 A JP S5651866A JP 12795779 A JP12795779 A JP 12795779A JP 12795779 A JP12795779 A JP 12795779A JP S5651866 A JPS5651866 A JP S5651866A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate
- base
- electrode
- scr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005685 electric field effect Effects 0.000 title 1
- 230000005684 electric field Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To make it possible to ignite at a positive low gate bias, by providing locally an n type base layer in such a manner as to pierce a sheetlike p type embedded gate layer having impurity concentration of less than 1X10<18>cm<-3> and leaving it usually in pinch-off position in a depletion layer between gate and base. CONSTITUTION:An n<-> epitaxial base layer 121 is made on a p<+> layer 11, the sheetlike p gate layer 14 whose concentration is less than 1X10<18>cm<-3> is embedded, and an n epitaxial layer 122 is put on it. The layer 122 is etched, an electrode 17 is attached to the gate layer 14, an n<+> layer 13 is provided on the n base 122, an electrode 16 is attached and protected by an insulation film 19. An n<+> layer 111 is selectively formed in such a manner as to pierce the p<+> layer 11, and the p-n junction is shortcircuited by an electrode 15 to shorten ignition time. By making adjustments of thickness and interval of the gate layer 14 and base concentration in the neighborhood of this layer, it is possible to pinch off the channel in absence of the gate bias. When forward voltage is impressed between the positive gate and the cathode 16 and carrier is injected to the channel, the carrier is dispersed in an adjoining SCR structure and an entire aria of the SCR junction is ignited in a moment. It is possible, by using this structure, to obtain the electric field effective type SCR of low ON resistance, high tension resistance and large current.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12795779A JPS5651866A (en) | 1979-10-05 | 1979-10-05 | Electric field effect type thyrister and driving method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12795779A JPS5651866A (en) | 1979-10-05 | 1979-10-05 | Electric field effect type thyrister and driving method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5651866A true JPS5651866A (en) | 1981-05-09 |
Family
ID=14972831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12795779A Pending JPS5651866A (en) | 1979-10-05 | 1979-10-05 | Electric field effect type thyrister and driving method thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5651866A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5250175A (en) * | 1975-10-20 | 1977-04-21 | Semiconductor Res Found | Electrostatic induction type thyristor |
JPS5422179A (en) * | 1977-07-20 | 1979-02-19 | Hitachi Ltd | Semiconductor switching element |
-
1979
- 1979-10-05 JP JP12795779A patent/JPS5651866A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5250175A (en) * | 1975-10-20 | 1977-04-21 | Semiconductor Res Found | Electrostatic induction type thyristor |
JPS5422179A (en) * | 1977-07-20 | 1979-02-19 | Hitachi Ltd | Semiconductor switching element |
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