JPS52102687A - Gate turn off thyrister - Google Patents

Gate turn off thyrister

Info

Publication number
JPS52102687A
JPS52102687A JP1891776A JP1891776A JPS52102687A JP S52102687 A JPS52102687 A JP S52102687A JP 1891776 A JP1891776 A JP 1891776A JP 1891776 A JP1891776 A JP 1891776A JP S52102687 A JPS52102687 A JP S52102687A
Authority
JP
Japan
Prior art keywords
gate turn
thyrister
turn
thyrisetr
150omega
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1891776A
Other languages
Japanese (ja)
Other versions
JPS607393B2 (en
Inventor
Junichi Koizumi
Takahiro Nagano
Isamu Sanbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1891776A priority Critical patent/JPS607393B2/en
Publication of JPS52102687A publication Critical patent/JPS52102687A/en
Publication of JPS607393B2 publication Critical patent/JPS607393B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To increase turn off gain without increasing on-state voltage, by forming a p-type base layer of a gate turn off thyrisetr by means of epitaxial growing method having apr. uniform impurity concentration and holding spec. resistance up to 150OMEGA/square cm.
JP1891776A 1976-02-25 1976-02-25 Gate turn-off thyristor Expired JPS607393B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1891776A JPS607393B2 (en) 1976-02-25 1976-02-25 Gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1891776A JPS607393B2 (en) 1976-02-25 1976-02-25 Gate turn-off thyristor

Publications (2)

Publication Number Publication Date
JPS52102687A true JPS52102687A (en) 1977-08-29
JPS607393B2 JPS607393B2 (en) 1985-02-23

Family

ID=11984951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1891776A Expired JPS607393B2 (en) 1976-02-25 1976-02-25 Gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS607393B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100782604B1 (en) 2006-11-22 2007-12-06 대양롤랜트 주식회사 Impact roller wheel for conveyer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100782604B1 (en) 2006-11-22 2007-12-06 대양롤랜트 주식회사 Impact roller wheel for conveyer

Also Published As

Publication number Publication date
JPS607393B2 (en) 1985-02-23

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