JPS524179A - Semiconductor rectifier device and its manufacturing method - Google Patents
Semiconductor rectifier device and its manufacturing methodInfo
- Publication number
- JPS524179A JPS524179A JP8003775A JP8003775A JPS524179A JP S524179 A JPS524179 A JP S524179A JP 8003775 A JP8003775 A JP 8003775A JP 8003775 A JP8003775 A JP 8003775A JP S524179 A JPS524179 A JP S524179A
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- rectifier device
- semiconductor rectifier
- semiconductor
- desity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To provide a diode with small forward voltage drop, by a polycrystal layer with a desired desity of impurity.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8003775A JPS524179A (en) | 1975-06-30 | 1975-06-30 | Semiconductor rectifier device and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8003775A JPS524179A (en) | 1975-06-30 | 1975-06-30 | Semiconductor rectifier device and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS524179A true JPS524179A (en) | 1977-01-13 |
JPS5513594B2 JPS5513594B2 (en) | 1980-04-10 |
Family
ID=13707043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8003775A Granted JPS524179A (en) | 1975-06-30 | 1975-06-30 | Semiconductor rectifier device and its manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS524179A (en) |
-
1975
- 1975-06-30 JP JP8003775A patent/JPS524179A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5513594B2 (en) | 1980-04-10 |
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