JPS524179A - Semiconductor rectifier device and its manufacturing method - Google Patents

Semiconductor rectifier device and its manufacturing method

Info

Publication number
JPS524179A
JPS524179A JP8003775A JP8003775A JPS524179A JP S524179 A JPS524179 A JP S524179A JP 8003775 A JP8003775 A JP 8003775A JP 8003775 A JP8003775 A JP 8003775A JP S524179 A JPS524179 A JP S524179A
Authority
JP
Japan
Prior art keywords
manufacturing
rectifier device
semiconductor rectifier
semiconductor
desity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8003775A
Other languages
Japanese (ja)
Other versions
JPS5513594B2 (en
Inventor
Masahiro Okamura
Takuzo Ogawa
Mitsuru Ura
Masao Tsuruoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8003775A priority Critical patent/JPS524179A/en
Publication of JPS524179A publication Critical patent/JPS524179A/en
Publication of JPS5513594B2 publication Critical patent/JPS5513594B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To provide a diode with small forward voltage drop, by a polycrystal layer with a desired desity of impurity.
JP8003775A 1975-06-30 1975-06-30 Semiconductor rectifier device and its manufacturing method Granted JPS524179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8003775A JPS524179A (en) 1975-06-30 1975-06-30 Semiconductor rectifier device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8003775A JPS524179A (en) 1975-06-30 1975-06-30 Semiconductor rectifier device and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS524179A true JPS524179A (en) 1977-01-13
JPS5513594B2 JPS5513594B2 (en) 1980-04-10

Family

ID=13707043

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8003775A Granted JPS524179A (en) 1975-06-30 1975-06-30 Semiconductor rectifier device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS524179A (en)

Also Published As

Publication number Publication date
JPS5513594B2 (en) 1980-04-10

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