JPS53135289A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS53135289A
JPS53135289A JP5029677A JP5029677A JPS53135289A JP S53135289 A JPS53135289 A JP S53135289A JP 5029677 A JP5029677 A JP 5029677A JP 5029677 A JP5029677 A JP 5029677A JP S53135289 A JPS53135289 A JP S53135289A
Authority
JP
Japan
Prior art keywords
layer
impurity density
emitter layer
thyristor
constituting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5029677A
Other languages
Japanese (ja)
Other versions
JPS5916416B2 (en
Inventor
Takahiro Nagano
Masami Naito
Takuzo Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5029677A priority Critical patent/JPS5916416B2/en
Publication of JPS53135289A publication Critical patent/JPS53135289A/en
Publication of JPS5916416B2 publication Critical patent/JPS5916416B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To make forward and backward stopping voltages equivalent and reduce the voltage drop and the turn-off time by constituting one emitter layer, which has the impurity quantity smaller than the other emitter layer, by the first layer of a comparatively low impurity density and the second layer of a comparatively high impurity density.
JP5029677A 1977-04-30 1977-04-30 thyristor Expired JPS5916416B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5029677A JPS5916416B2 (en) 1977-04-30 1977-04-30 thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5029677A JPS5916416B2 (en) 1977-04-30 1977-04-30 thyristor

Publications (2)

Publication Number Publication Date
JPS53135289A true JPS53135289A (en) 1978-11-25
JPS5916416B2 JPS5916416B2 (en) 1984-04-16

Family

ID=12854926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5029677A Expired JPS5916416B2 (en) 1977-04-30 1977-04-30 thyristor

Country Status (1)

Country Link
JP (1) JPS5916416B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60187058A (en) * 1984-03-07 1985-09-24 Hitachi Ltd Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0228617U (en) * 1988-08-11 1990-02-23

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60187058A (en) * 1984-03-07 1985-09-24 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS5916416B2 (en) 1984-04-16

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