JPS53145577A - Production of semiconductor rectifier - Google Patents

Production of semiconductor rectifier

Info

Publication number
JPS53145577A
JPS53145577A JP5982177A JP5982177A JPS53145577A JP S53145577 A JPS53145577 A JP S53145577A JP 5982177 A JP5982177 A JP 5982177A JP 5982177 A JP5982177 A JP 5982177A JP S53145577 A JPS53145577 A JP S53145577A
Authority
JP
Japan
Prior art keywords
production
semiconductor rectifier
diode
layer
impruity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5982177A
Other languages
Japanese (ja)
Other versions
JPS576272B2 (en
Inventor
Yuji Shinno
Toshitaka Yamamoto
Koichi Moriyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5982177A priority Critical patent/JPS53145577A/en
Publication of JPS53145577A publication Critical patent/JPS53145577A/en
Publication of JPS576272B2 publication Critical patent/JPS576272B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes

Abstract

PURPOSE:To decrease forward voltage drop and obtain a diode of low loss and high speed by providing a polycrystalline layer of an extremely high impruity concentration on the uppermost layer forming the diode and attaching an electrode thereto through a solder layer.
JP5982177A 1977-05-25 1977-05-25 Production of semiconductor rectifier Granted JPS53145577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5982177A JPS53145577A (en) 1977-05-25 1977-05-25 Production of semiconductor rectifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5982177A JPS53145577A (en) 1977-05-25 1977-05-25 Production of semiconductor rectifier

Publications (2)

Publication Number Publication Date
JPS53145577A true JPS53145577A (en) 1978-12-18
JPS576272B2 JPS576272B2 (en) 1982-02-04

Family

ID=13124263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5982177A Granted JPS53145577A (en) 1977-05-25 1977-05-25 Production of semiconductor rectifier

Country Status (1)

Country Link
JP (1) JPS53145577A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6420648A (en) * 1987-07-15 1989-01-24 Toshiba Corp Semiconductor device and manufacture thereof
JPH01501030A (en) * 1986-09-30 1989-04-06 オイペック・オイロペーイッシェ・ゲゼルシャフト・フュール・ライスツングスハルプライター・エムベーハー・ウント・コンパニイ・コマンディートゲゼルシャフト Semiconductor component with an anode-side P region and an adjacent lightly doped N base region
JPH01259570A (en) * 1988-04-11 1989-10-17 Toshiba Corp Semiconductor device and manufacture thereof
US5356830A (en) * 1988-09-19 1994-10-18 Kabushiki Kaisha Tobshiba Semiconductor device and its manufacturing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6219818U (en) * 1985-07-22 1987-02-05

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01501030A (en) * 1986-09-30 1989-04-06 オイペック・オイロペーイッシェ・ゲゼルシャフト・フュール・ライスツングスハルプライター・エムベーハー・ウント・コンパニイ・コマンディートゲゼルシャフト Semiconductor component with an anode-side P region and an adjacent lightly doped N base region
JPS6420648A (en) * 1987-07-15 1989-01-24 Toshiba Corp Semiconductor device and manufacture thereof
JPH0579182B2 (en) * 1987-07-15 1993-11-01 Tokyo Shibaura Electric Co
JPH01259570A (en) * 1988-04-11 1989-10-17 Toshiba Corp Semiconductor device and manufacture thereof
US5356830A (en) * 1988-09-19 1994-10-18 Kabushiki Kaisha Tobshiba Semiconductor device and its manufacturing method

Also Published As

Publication number Publication date
JPS576272B2 (en) 1982-02-04

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