JPS51130176A - Semiconductor device process - Google Patents

Semiconductor device process

Info

Publication number
JPS51130176A
JPS51130176A JP5572075A JP5572075A JPS51130176A JP S51130176 A JPS51130176 A JP S51130176A JP 5572075 A JP5572075 A JP 5572075A JP 5572075 A JP5572075 A JP 5572075A JP S51130176 A JPS51130176 A JP S51130176A
Authority
JP
Japan
Prior art keywords
semiconductor device
device process
semiconductor devices
manufacture semiconductor
dipping effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5572075A
Other languages
Japanese (ja)
Inventor
Yasutaka Ikushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5572075A priority Critical patent/JPS51130176A/en
Publication of JPS51130176A publication Critical patent/JPS51130176A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: A process to manufacture semiconductor devices without generating emitter dipping effect at all.
COPYRIGHT: (C)1976,JPO&Japio
JP5572075A 1975-05-07 1975-05-07 Semiconductor device process Pending JPS51130176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5572075A JPS51130176A (en) 1975-05-07 1975-05-07 Semiconductor device process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5572075A JPS51130176A (en) 1975-05-07 1975-05-07 Semiconductor device process

Publications (1)

Publication Number Publication Date
JPS51130176A true JPS51130176A (en) 1976-11-12

Family

ID=13006695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5572075A Pending JPS51130176A (en) 1975-05-07 1975-05-07 Semiconductor device process

Country Status (1)

Country Link
JP (1) JPS51130176A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4958206A (en) * 1988-06-28 1990-09-18 Texas Instruments Incorporated Diffused bit line trench capacitor dram cell
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US4958206A (en) * 1988-06-28 1990-09-18 Texas Instruments Incorporated Diffused bit line trench capacitor dram cell

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