JPS57184250A - Field-effect type semiconductor circuit element - Google Patents

Field-effect type semiconductor circuit element

Info

Publication number
JPS57184250A
JPS57184250A JP5962082A JP5962082A JPS57184250A JP S57184250 A JPS57184250 A JP S57184250A JP 5962082 A JP5962082 A JP 5962082A JP 5962082 A JP5962082 A JP 5962082A JP S57184250 A JPS57184250 A JP S57184250A
Authority
JP
Japan
Prior art keywords
substrate
type
parts
region
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5962082A
Other languages
Japanese (ja)
Inventor
Yoshihiko Mizushima
Akio Tamama
Masahiro Sakagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5962082A priority Critical patent/JPS57184250A/en
Publication of JPS57184250A publication Critical patent/JPS57184250A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Abstract

PURPOSE:To increase the speed of a JFET by forming a reverse conduction type region into one conduction type substrate, shaping one conduction type region into the region and making a distance between the substrate and the one conduction type region in one part of the surface smaller than other parts. CONSTITUTION:The JFET is formed in such a manner that a substrate 1 is formed by growing an N type Si layer 1b onto the N<+> type Si substrate 1 in epitaxial shape while the P type layer 3 and the N type layer 4 are formed through impurity diffusion, and the distance L in one parts of the surfaces 2 of the substrate 1 and the N type layer 4 is made smaller than distances L', L'' in other parts, and electrodes 9-12 are shaped. Accordingly, the length of an output current path can sufficiently be shortened, output currents can be obtained at high speed and power consumption can be reduced.
JP5962082A 1982-04-12 1982-04-12 Field-effect type semiconductor circuit element Pending JPS57184250A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5962082A JPS57184250A (en) 1982-04-12 1982-04-12 Field-effect type semiconductor circuit element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5962082A JPS57184250A (en) 1982-04-12 1982-04-12 Field-effect type semiconductor circuit element

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP52115279A Division JPS5812749B2 (en) 1977-09-26 1977-09-26 Field effect semiconductor circuit element

Publications (1)

Publication Number Publication Date
JPS57184250A true JPS57184250A (en) 1982-11-12

Family

ID=13118465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5962082A Pending JPS57184250A (en) 1982-04-12 1982-04-12 Field-effect type semiconductor circuit element

Country Status (1)

Country Link
JP (1) JPS57184250A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5048494B2 (en) * 2005-05-06 2012-10-17 株式会社ミツバ Fuel supply device
US11441522B2 (en) 2015-12-17 2022-09-13 Denso Corporation Fuel pump unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5048494B2 (en) * 2005-05-06 2012-10-17 株式会社ミツバ Fuel supply device
US11441522B2 (en) 2015-12-17 2022-09-13 Denso Corporation Fuel pump unit

Similar Documents

Publication Publication Date Title
JPS55133574A (en) Insulated gate field effect transistor
JPS57184250A (en) Field-effect type semiconductor circuit element
JPS54113273A (en) Field effect-type switching element
JPS5544743A (en) Manufacture of semiconductor device
JPS5759384A (en) Manufacture of longitudinal type insulated field effect semiconductor device
JPS54142976A (en) Manufacture of semiconductor device
JPS5778171A (en) Thyristor
JPS55140262A (en) Semiconductor device
JPS57187947A (en) Electrostatic chuck
JPS5539636A (en) Composite semiconductor
JPS5688362A (en) Vertical type power mos transistor
JPS56112762A (en) Semiconductor device
JPS56150848A (en) Semiconductor integrated circuit and lateral transistor
JPS57201063A (en) Manufacture of semiconductor device
JPS5727056A (en) Semiconductor device
JPS57197869A (en) Semiconductor device
JPS56116661A (en) Semiconductor integrated circuit device and manufacture thereof
JPS5658288A (en) Semiconductor device
JPS55151365A (en) Insulated gate type transistor and semiconductor integrated circuit
JPS57124470A (en) Semiconductor device
JPS5550653A (en) Resistance-capacity parallel connecting body
JPS57111043A (en) Semiconductor integrated circuit and manufacture thereof
JPS5678127A (en) Manufacture of semiconductor device
JPS54152981A (en) Iil semiconductor device
JPS57124480A (en) Logical integrated circuit device