JPS5727056A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5727056A
JPS5727056A JP10279080A JP10279080A JPS5727056A JP S5727056 A JPS5727056 A JP S5727056A JP 10279080 A JP10279080 A JP 10279080A JP 10279080 A JP10279080 A JP 10279080A JP S5727056 A JPS5727056 A JP S5727056A
Authority
JP
Japan
Prior art keywords
electrode
region
metals
shaped
buffer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10279080A
Other languages
Japanese (ja)
Inventor
Hiroyuki Nagao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10279080A priority Critical patent/JPS5727056A/en
Publication of JPS5727056A publication Critical patent/JPS5727056A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To form an excellent electrode to a P type region without exerting an adverse effect to a PN junction by shaping an Au electrode on molybdenum through a buffer metal. CONSTITUTION:P type impurities are introduced into an N type GaAs semiconductor substrate 1, a P<+> type region 3 with the P<+>-N junction 2 is shaped, and an opening for forming an electrode in an ohmic contact manner is molded to an oxide film 5 on the region 3. Mo is evaporated to the opening section under vacuum on the surface of the region 3, and the foundation ohmic electrode 6 is formed. The Au electrode 9 is shaped on the electrode 6 through the buffer metals. That is, Ti7- Pt8-Au9 group metals are coated, and used as electrodes on the P<+> region. Metals having thermal expansion coefficients between the thermal expansion coefficients of Mo and Au are used as the buffer metals. An ohmic electrode 10 is shaped at the N side with an AuGe-Ni group metal.
JP10279080A 1980-07-25 1980-07-25 Semiconductor device Pending JPS5727056A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10279080A JPS5727056A (en) 1980-07-25 1980-07-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10279080A JPS5727056A (en) 1980-07-25 1980-07-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5727056A true JPS5727056A (en) 1982-02-13

Family

ID=14336907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10279080A Pending JPS5727056A (en) 1980-07-25 1980-07-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5727056A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1041254A (en) * 1996-07-24 1998-02-13 Sony Corp Ohmic electrode and forming method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1041254A (en) * 1996-07-24 1998-02-13 Sony Corp Ohmic electrode and forming method thereof

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