JPS5612740A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5612740A
JPS5612740A JP8771779A JP8771779A JPS5612740A JP S5612740 A JPS5612740 A JP S5612740A JP 8771779 A JP8771779 A JP 8771779A JP 8771779 A JP8771779 A JP 8771779A JP S5612740 A JPS5612740 A JP S5612740A
Authority
JP
Japan
Prior art keywords
wire
semiconductor device
semiconductor substrate
highly reliable
extremely limited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8771779A
Other languages
Japanese (ja)
Inventor
Toshio Takezawa
Masaharu Aoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8771779A priority Critical patent/JPS5612740A/en
Priority to US06/166,182 priority patent/US4433004A/en
Priority to DE19803026026 priority patent/DE3026026A1/en
Publication of JPS5612740A publication Critical patent/JPS5612740A/en
Priority to US06/554,336 priority patent/US4561009A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE:To obtain the semiconductor device with a highly reliable wire with extremely limited corrosion by forming an alumina film containing Cu, Mg and the like on the wire made of Al alloy provided on the semiconductor substrate. CONSTITUTION:The silicon oxide film is formed on the main surface of a semiconductor substrate 4 comprising a collector 1, base 2 and emitter 3 and an emitter contact hole is made. Then, the Al alloy wire 7, 2% Al, 2% Si, Cu and is formed. The semiconductor substrate is positively oxidized in the 6% oxalic acid solution to yield a bipolar transistor which has an alumina film 8 containing 0.8% Cu formed on the surface of the wire 7 at a thickness of 2,000Angstrom . Besides Cu, metal including Mg, NI, Cr, Mn, Ti and Y may be used. Thus, it is possible to obtain the semiconductor device having a highly reliable wire improved in the disconnection property with extremely limited corrosion.
JP8771779A 1979-07-11 1979-07-11 Semiconductor device and manufacture thereof Pending JPS5612740A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP8771779A JPS5612740A (en) 1979-07-11 1979-07-11 Semiconductor device and manufacture thereof
US06/166,182 US4433004A (en) 1979-07-11 1980-07-07 Semiconductor device and a method for manufacturing the same
DE19803026026 DE3026026A1 (en) 1979-07-11 1980-07-09 SEMICONDUCTOR ELEMENT AND METHOD FOR THE PRODUCTION THEREOF
US06/554,336 US4561009A (en) 1979-07-11 1983-11-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8771779A JPS5612740A (en) 1979-07-11 1979-07-11 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5612740A true JPS5612740A (en) 1981-02-07

Family

ID=13922647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8771779A Pending JPS5612740A (en) 1979-07-11 1979-07-11 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5612740A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04109481U (en) * 1991-03-08 1992-09-22 株式会社豊田自動織機製作所 Variable capacity swash plate compressor
US5830786A (en) * 1993-02-22 1998-11-03 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating electronic circuits with anodically oxidized scandium doped aluminum wiring
US7534752B2 (en) * 1996-07-03 2009-05-19 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04109481U (en) * 1991-03-08 1992-09-22 株式会社豊田自動織機製作所 Variable capacity swash plate compressor
US5830786A (en) * 1993-02-22 1998-11-03 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating electronic circuits with anodically oxidized scandium doped aluminum wiring
US7534752B2 (en) * 1996-07-03 2009-05-19 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation

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