JPS5660035A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5660035A JPS5660035A JP13560079A JP13560079A JPS5660035A JP S5660035 A JPS5660035 A JP S5660035A JP 13560079 A JP13560079 A JP 13560079A JP 13560079 A JP13560079 A JP 13560079A JP S5660035 A JPS5660035 A JP S5660035A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thickness
- layer
- oxide film
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
PURPOSE:To prevent the exfoliation of the metal film of the subject device by a method wherein an SiO2 film is provided on an Si substrate, and a Cr film, Cu film, etc. are provided successively on the region from the aperture section to the oxide film, on which an AU protruded electrode is provided and a Cu lead with an Sn film is attached. CONSTITUTION:An SiO22 is provided on an Si substrate 1, a bimetal layer consisting of the first layer of a Cl film 3 and the second layer of a Cu or an Ni film 4 are formed, an Au protruded electrode 5 is provided on the above bimetal layer and a Cu lead 6 having an Sn film 6' is connected. When the thickness of the oxide film 2 is less then 1.0mum, the thickness of the second layer metal 4 is to be more than 1.5X(thickness of oxide film)+3mum, and when the thickness of the former is more than 1.0mum, the thickness of the latter is to be more than 1.5X(thickness of oxide film). Hence, the exfoliation of the metal projection and the cracks on the oxide film are prevented and an excellent wireless bonding can be performed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13560079A JPS5660035A (en) | 1979-10-19 | 1979-10-19 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13560079A JPS5660035A (en) | 1979-10-19 | 1979-10-19 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5660035A true JPS5660035A (en) | 1981-05-23 |
Family
ID=15155600
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13560079A Pending JPS5660035A (en) | 1979-10-19 | 1979-10-19 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5660035A (en) |
-
1979
- 1979-10-19 JP JP13560079A patent/JPS5660035A/en active Pending
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