JPS57188884A - Formation of recessed minute multilayer gate electrode - Google Patents

Formation of recessed minute multilayer gate electrode

Info

Publication number
JPS57188884A
JPS57188884A JP7321281A JP7321281A JPS57188884A JP S57188884 A JPS57188884 A JP S57188884A JP 7321281 A JP7321281 A JP 7321281A JP 7321281 A JP7321281 A JP 7321281A JP S57188884 A JPS57188884 A JP S57188884A
Authority
JP
Japan
Prior art keywords
layer
gate electrode
recessed
mask
minute
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7321281A
Other languages
Japanese (ja)
Inventor
Masaoki Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7321281A priority Critical patent/JPS57188884A/en
Publication of JPS57188884A publication Critical patent/JPS57188884A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

PURPOSE:To form a recessed minute multilayer gate electrode of GaAs FET with excellent characteristics by a method wherein the gate electrode is coated with a mask and a multilayer portion is gradually removed so as to leave only the gate electrode on a recessed semiconductor substrate. CONSTITUTION:A first layer of Al 20 is provided on a semiconductor substrate 10 and then a second SiO2 layer 30 used as a mask is provided on the first layer, wherein a minute aperture 31 is made, while a larger aperture 21 is forme in the first layer 20 to expose the surface of the semiconductor. The exposed surface is removed to form a recess 11. Subsequently, the recess is covered with an insulated material and an opening is made in a part corresponding to a gate electrode. Then metal films of Mo 60, Ti 70, Au 80 constituting the gate electrode are attached to the surface in sequence. The opening formed with the first layer 20 and the second layer 30 is covered with a mask and the metal film on the second layer 20, the second layer 30 and further the first layer 20 followed by the mask are all removed, so that a multilayer minute gate electrode metal is left on the surface.
JP7321281A 1981-05-15 1981-05-15 Formation of recessed minute multilayer gate electrode Pending JPS57188884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7321281A JPS57188884A (en) 1981-05-15 1981-05-15 Formation of recessed minute multilayer gate electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7321281A JPS57188884A (en) 1981-05-15 1981-05-15 Formation of recessed minute multilayer gate electrode

Publications (1)

Publication Number Publication Date
JPS57188884A true JPS57188884A (en) 1982-11-19

Family

ID=13511620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7321281A Pending JPS57188884A (en) 1981-05-15 1981-05-15 Formation of recessed minute multilayer gate electrode

Country Status (1)

Country Link
JP (1) JPS57188884A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62214674A (en) * 1986-03-14 1987-09-21 Fujitsu Ltd Manufacture of semiconductor device
US4927782A (en) * 1989-06-27 1990-05-22 The United States Of America As Represented By The Secretary Of The Navy Method of making self-aligned GaAs/AlGaAs FET's
US5088157A (en) * 1989-10-03 1992-02-18 Howa Machinery, Ltd. Unit drafting mechanism having air jet apertured slide metals and rollers

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62214674A (en) * 1986-03-14 1987-09-21 Fujitsu Ltd Manufacture of semiconductor device
US4927782A (en) * 1989-06-27 1990-05-22 The United States Of America As Represented By The Secretary Of The Navy Method of making self-aligned GaAs/AlGaAs FET's
US5088157A (en) * 1989-10-03 1992-02-18 Howa Machinery, Ltd. Unit drafting mechanism having air jet apertured slide metals and rollers

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