JPS57188880A - Formation of recess-type micro-multilayer gate electrode - Google Patents
Formation of recess-type micro-multilayer gate electrodeInfo
- Publication number
- JPS57188880A JPS57188880A JP7320881A JP7320881A JPS57188880A JP S57188880 A JPS57188880 A JP S57188880A JP 7320881 A JP7320881 A JP 7320881A JP 7320881 A JP7320881 A JP 7320881A JP S57188880 A JPS57188880 A JP S57188880A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- recess
- multilayer
- type micro
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000012212 insulator Substances 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 150000002739 metals Chemical class 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To form a recess-type micro-multilayer gate electrode of a GaAs FET excellent in characteristics, by a method wherein an end of a multilayer gate electrode is formed at a part of an insulator in a recess, and the multilayer part is successively removed so that only a gate electrode is left. CONSTITUTION:On a GaAs semiconductor substrate 10, a first Al layer 20 and a second SiO2 layer to be a mask are provided. A minute opening 41 and an opening 31 larger than the former are formed therein. A part of the semiconductor surface is removed to form a recess 11. An insulator is selectively formed with a given angle on the surface and a part of the recess by employing the second layer as a mask. After metal layers, such as Mo 60, Ti 70 and Au 80, are sucessively deposited as gate electrode metals, these metals and the mask are removed so that the end of the gate electrode metals forms on the recessed semiconductor substrate a multilayer gate electrode formed on a part of the insulator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7320881A JPS57188880A (en) | 1981-05-15 | 1981-05-15 | Formation of recess-type micro-multilayer gate electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7320881A JPS57188880A (en) | 1981-05-15 | 1981-05-15 | Formation of recess-type micro-multilayer gate electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57188880A true JPS57188880A (en) | 1982-11-19 |
Family
ID=13511497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7320881A Pending JPS57188880A (en) | 1981-05-15 | 1981-05-15 | Formation of recess-type micro-multilayer gate electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57188880A (en) |
-
1981
- 1981-05-15 JP JP7320881A patent/JPS57188880A/en active Pending
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