JPS5570023A - Formation of electrode and wiring for semiconductor - Google Patents

Formation of electrode and wiring for semiconductor

Info

Publication number
JPS5570023A
JPS5570023A JP14446378A JP14446378A JPS5570023A JP S5570023 A JPS5570023 A JP S5570023A JP 14446378 A JP14446378 A JP 14446378A JP 14446378 A JP14446378 A JP 14446378A JP S5570023 A JPS5570023 A JP S5570023A
Authority
JP
Japan
Prior art keywords
electrode
layer
wiring
formation
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14446378A
Other languages
Japanese (ja)
Inventor
Tatsuya Enomoto
Hiroji Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14446378A priority Critical patent/JPS5570023A/en
Publication of JPS5570023A publication Critical patent/JPS5570023A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prevent generation of Al spike by forming multicrystal silicon layer at the opening for formation of electrode of silicon oxide film, causing the formed metal layer to react against the multicrystal silicon and using the obtained silicide layer for electrode and wiring.
CONSTITUTION: Silicon oxide film 3 is provided with the opening 5 for taking out electrode. After formation of multicrystal silicon layer 11 on the entire surface, the opening is trimmed into the specified shape. Then, the entire surface is provided with metal layer 12 such as Pt, Pd, Mo, W, Ni, Ti, Cr and the like, which reacts through silicon and heat treatment. After converting the area containing multicrystal silicon into the silicide layer 13 by means of heat treatment, the metal layer 12 alone is removed through etching and the silicide side 13 as it is used for electrode and wiring. In accordance with the above process, wiring may be based on the formation of the Al layer 14 with the silicide layer 13 formed only as electrode.
COPYRIGHT: (C)1980,JPO&Japio
JP14446378A 1978-11-20 1978-11-20 Formation of electrode and wiring for semiconductor Pending JPS5570023A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14446378A JPS5570023A (en) 1978-11-20 1978-11-20 Formation of electrode and wiring for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14446378A JPS5570023A (en) 1978-11-20 1978-11-20 Formation of electrode and wiring for semiconductor

Publications (1)

Publication Number Publication Date
JPS5570023A true JPS5570023A (en) 1980-05-27

Family

ID=15362847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14446378A Pending JPS5570023A (en) 1978-11-20 1978-11-20 Formation of electrode and wiring for semiconductor

Country Status (1)

Country Link
JP (1) JPS5570023A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56167331A (en) * 1980-05-28 1981-12-23 Sony Corp Manufacture of semiconductor device
JPS58138053A (en) * 1982-02-12 1983-08-16 Nec Corp Semiconductor device and manufacture thereof
JPS5910270A (en) * 1982-07-09 1984-01-19 Nec Corp Semiconductor integrated circuit device
JPS5916383A (en) * 1982-07-19 1984-01-27 Sony Corp Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56167331A (en) * 1980-05-28 1981-12-23 Sony Corp Manufacture of semiconductor device
JPH0249011B2 (en) * 1980-05-28 1990-10-26 Sony Corp
JPS58138053A (en) * 1982-02-12 1983-08-16 Nec Corp Semiconductor device and manufacture thereof
JPS5910270A (en) * 1982-07-09 1984-01-19 Nec Corp Semiconductor integrated circuit device
JPH0376023B2 (en) * 1982-07-09 1991-12-04 Nippon Electric Co
JPS5916383A (en) * 1982-07-19 1984-01-27 Sony Corp Semiconductor device

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