JPS5376659A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5376659A
JPS5376659A JP15246276A JP15246276A JPS5376659A JP S5376659 A JPS5376659 A JP S5376659A JP 15246276 A JP15246276 A JP 15246276A JP 15246276 A JP15246276 A JP 15246276A JP S5376659 A JPS5376659 A JP S5376659A
Authority
JP
Japan
Prior art keywords
film
oxide films
passivated film
caused
passivated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15246276A
Other languages
Japanese (ja)
Other versions
JPS6020904B2 (en
Inventor
Yuji Kusano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15246276A priority Critical patent/JPS6020904B2/en
Publication of JPS5376659A publication Critical patent/JPS5376659A/en
Publication of JPS6020904B2 publication Critical patent/JPS6020904B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To prevent the peeling of oxide films occurring in the extremely high rate of etching of a phosphoric acid passivated film as compared to other oxide films, the disconnection of electrode metals owing to the pocket form biting of oxide films caused by the passivated film at the stepping parts of the oxide film, and the corrosion of electrode metals caused by the direct contact of the passivated film and the electrode metal, by preventing the passivation layer with the passivated film from direct exposure.
COPYRIGHT: (C)1978,JPO&Japio
JP15246276A 1976-12-18 1976-12-18 Manufacturing method of semiconductor device Expired JPS6020904B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15246276A JPS6020904B2 (en) 1976-12-18 1976-12-18 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15246276A JPS6020904B2 (en) 1976-12-18 1976-12-18 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5376659A true JPS5376659A (en) 1978-07-07
JPS6020904B2 JPS6020904B2 (en) 1985-05-24

Family

ID=15541032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15246276A Expired JPS6020904B2 (en) 1976-12-18 1976-12-18 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6020904B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5582436A (en) * 1978-12-15 1980-06-21 Nippon Denso Co Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5582436A (en) * 1978-12-15 1980-06-21 Nippon Denso Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6020904B2 (en) 1985-05-24

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