JPS5582436A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5582436A
JPS5582436A JP15593578A JP15593578A JPS5582436A JP S5582436 A JPS5582436 A JP S5582436A JP 15593578 A JP15593578 A JP 15593578A JP 15593578 A JP15593578 A JP 15593578A JP S5582436 A JPS5582436 A JP S5582436A
Authority
JP
Japan
Prior art keywords
insulating film
phosphorus
semiconductor device
chemical treatment
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15593578A
Other languages
Japanese (ja)
Inventor
Kunihiko Hara
Yoshio Hattori
Toshio Sonobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP15593578A priority Critical patent/JPS5582436A/en
Publication of JPS5582436A publication Critical patent/JPS5582436A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prevent a phosphorus-containing insulating film from being removed in chemical treatment, by coating a no-phosphorus-containing insulating film on the phosphorus-containing insulating film to provide double surface protective films for a semiconductor device.
CONSTITUTION: A first insulating film 3, which contains phosphorus or a phosphorus oxide which is effective to prevent Na+ ions from invading, is provided as a surface protective film for a semiconductor substrate 1 on which a semiconductor device is manufactured. A second insulating film 4, which contains no phosphorus or phosphorus oxide, is provided on the first insulating film 3. A hole is opened by a conventional method to provide an electrode. After chemical treatment is effected to assure good ohmic contact, the electrode 5 is provided. Since the surface of the first insulating film 3 containing the phosphorus or phosphorus oxide is coated with the second insulating film 4 containing none of them, the first insulating film weak to the chemical treatment is protected therefrom. Therefore, a protecting property against external contamination is not lost.
COPYRIGHT: (C)1980,JPO&Japio
JP15593578A 1978-12-15 1978-12-15 Manufacture of semiconductor device Pending JPS5582436A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15593578A JPS5582436A (en) 1978-12-15 1978-12-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15593578A JPS5582436A (en) 1978-12-15 1978-12-15 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5582436A true JPS5582436A (en) 1980-06-21

Family

ID=15616720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15593578A Pending JPS5582436A (en) 1978-12-15 1978-12-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5582436A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51127680A (en) * 1975-04-28 1976-11-06 Toshiba Corp Manufacturing process of semiconductor device
JPS5351965A (en) * 1976-10-22 1978-05-11 Hitachi Ltd Semiconductor unit
JPS5376659A (en) * 1976-12-18 1978-07-07 Mitsubishi Electric Corp Production of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51127680A (en) * 1975-04-28 1976-11-06 Toshiba Corp Manufacturing process of semiconductor device
JPS5351965A (en) * 1976-10-22 1978-05-11 Hitachi Ltd Semiconductor unit
JPS5376659A (en) * 1976-12-18 1978-07-07 Mitsubishi Electric Corp Production of semiconductor device

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