JPS5588325A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5588325A
JPS5588325A JP16268978A JP16268978A JPS5588325A JP S5588325 A JPS5588325 A JP S5588325A JP 16268978 A JP16268978 A JP 16268978A JP 16268978 A JP16268978 A JP 16268978A JP S5588325 A JPS5588325 A JP S5588325A
Authority
JP
Japan
Prior art keywords
glass film
phosphorus glass
film
phosphorus
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16268978A
Other languages
Japanese (ja)
Other versions
JPS6250974B2 (en
Inventor
Kiyokazu Inoue
Masami Yamaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP16268978A priority Critical patent/JPS5588325A/en
Publication of JPS5588325A publication Critical patent/JPS5588325A/en
Publication of JPS6250974B2 publication Critical patent/JPS6250974B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To protect phosphorus glass film by providing a silicon oxidized film on the phosphorus glass film to form on the surface as a surface stabilizing protective film for providing a plated electrode on a Planar semiconductor device.
CONSTITUTION: An n-type domain is formed in a semiconductor substrate by means of phosphorus as a diffusion impurity source, a phosphorus glass film 5 is formed on the surface of the semiconductor substrate at the same time, at least one layer of silicon oxidized film 6 is formed then on the phosphorus glass film 5, and the semiconductor substrate is treated in the atmosphere at 800°C or higher. Since the phosphorus glass film weak in etching reagent and alkaline metal-plating solution is thus protected by the silicon oxidized film, the phosphorus glass film will not be damaged at the consecutive plating process, and a surface stabilizing function of the phosphorus glass film in its intrinsic property is maintained, thus preventing characteristic deterioration of the semiconductor.
COPYRIGHT: (C)1980,JPO&Japio
JP16268978A 1978-12-27 1978-12-27 Manufacture of semiconductor device Granted JPS5588325A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16268978A JPS5588325A (en) 1978-12-27 1978-12-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16268978A JPS5588325A (en) 1978-12-27 1978-12-27 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5588325A true JPS5588325A (en) 1980-07-04
JPS6250974B2 JPS6250974B2 (en) 1987-10-28

Family

ID=15759419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16268978A Granted JPS5588325A (en) 1978-12-27 1978-12-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5588325A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209122A (en) * 1982-05-14 1983-12-06 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Method of producing metal pattern finely composed on surface of metal or semiconductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5371369U (en) * 1976-11-17 1978-06-15

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5371369U (en) * 1976-11-17 1978-06-15

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209122A (en) * 1982-05-14 1983-12-06 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Method of producing metal pattern finely composed on surface of metal or semiconductor

Also Published As

Publication number Publication date
JPS6250974B2 (en) 1987-10-28

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