JPS5588325A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5588325A JPS5588325A JP16268978A JP16268978A JPS5588325A JP S5588325 A JPS5588325 A JP S5588325A JP 16268978 A JP16268978 A JP 16268978A JP 16268978 A JP16268978 A JP 16268978A JP S5588325 A JPS5588325 A JP S5588325A
- Authority
- JP
- Japan
- Prior art keywords
- glass film
- phosphorus glass
- film
- phosphorus
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To protect phosphorus glass film by providing a silicon oxidized film on the phosphorus glass film to form on the surface as a surface stabilizing protective film for providing a plated electrode on a Planar semiconductor device.
CONSTITUTION: An n-type domain is formed in a semiconductor substrate by means of phosphorus as a diffusion impurity source, a phosphorus glass film 5 is formed on the surface of the semiconductor substrate at the same time, at least one layer of silicon oxidized film 6 is formed then on the phosphorus glass film 5, and the semiconductor substrate is treated in the atmosphere at 800°C or higher. Since the phosphorus glass film weak in etching reagent and alkaline metal-plating solution is thus protected by the silicon oxidized film, the phosphorus glass film will not be damaged at the consecutive plating process, and a surface stabilizing function of the phosphorus glass film in its intrinsic property is maintained, thus preventing characteristic deterioration of the semiconductor.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16268978A JPS5588325A (en) | 1978-12-27 | 1978-12-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16268978A JPS5588325A (en) | 1978-12-27 | 1978-12-27 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5588325A true JPS5588325A (en) | 1980-07-04 |
JPS6250974B2 JPS6250974B2 (en) | 1987-10-28 |
Family
ID=15759419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16268978A Granted JPS5588325A (en) | 1978-12-27 | 1978-12-27 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5588325A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58209122A (en) * | 1982-05-14 | 1983-12-06 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Method of producing metal pattern finely composed on surface of metal or semiconductor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5371369U (en) * | 1976-11-17 | 1978-06-15 |
-
1978
- 1978-12-27 JP JP16268978A patent/JPS5588325A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5371369U (en) * | 1976-11-17 | 1978-06-15 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58209122A (en) * | 1982-05-14 | 1983-12-06 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Method of producing metal pattern finely composed on surface of metal or semiconductor |
Also Published As
Publication number | Publication date |
---|---|
JPS6250974B2 (en) | 1987-10-28 |
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