JPS5456361A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS5456361A
JPS5456361A JP12238877A JP12238877A JPS5456361A JP S5456361 A JPS5456361 A JP S5456361A JP 12238877 A JP12238877 A JP 12238877A JP 12238877 A JP12238877 A JP 12238877A JP S5456361 A JPS5456361 A JP S5456361A
Authority
JP
Japan
Prior art keywords
layer
constitution
current density
high current
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12238877A
Other languages
Japanese (ja)
Inventor
Hajime Terakado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12238877A priority Critical patent/JPS5456361A/en
Publication of JPS5456361A publication Critical patent/JPS5456361A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To make a zener diode having an extremely shallow diffused layer by using metals which do not form eutectic alloy with Si at below glass sealing temperature or bonding temperature operated at a high current density.
CONSTITUTION: An opening is made in the oxide film 2 and PSG film 3 on an n type Si substrate 1 and an extremely shallow p layer 4 is made. Next, W 5, Cr 6, silver 7 are laminated, and a p layer 4 is selectively covered and is then removed, after which a silver bump 8 is thickly provided on the layer 7 surface. With this constitution, W-Si eutectic temperature is 1400°C and therefore W-Si eutectic alloy is not formed even when bonding temperature rises under operation at a high current density or even at the time of sealing glass tube at 650°C. Hence, the degradation or decrease in dielectric strength is prevented because this does not break down the shallow p layer 4. Since W and Mo has good thermal alignment with Si and may be readily selectively etched with an alkaline base etching solution, production is easy
COPYRIGHT: (C)1979,JPO&Japio
JP12238877A 1977-10-14 1977-10-14 Semiconductor element Pending JPS5456361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12238877A JPS5456361A (en) 1977-10-14 1977-10-14 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12238877A JPS5456361A (en) 1977-10-14 1977-10-14 Semiconductor element

Publications (1)

Publication Number Publication Date
JPS5456361A true JPS5456361A (en) 1979-05-07

Family

ID=14834553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12238877A Pending JPS5456361A (en) 1977-10-14 1977-10-14 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS5456361A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57126165A (en) * 1981-01-28 1982-08-05 Nec Home Electronics Ltd Dhd type glass sealed diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51428A (en) * 1974-06-19 1976-01-06 Kabotsuto Natsuto Gorufu kurabu

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51428A (en) * 1974-06-19 1976-01-06 Kabotsuto Natsuto Gorufu kurabu

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57126165A (en) * 1981-01-28 1982-08-05 Nec Home Electronics Ltd Dhd type glass sealed diode

Similar Documents

Publication Publication Date Title
JPS5513933A (en) Circuit element substrate and its manufacturing method
JPS5456361A (en) Semiconductor element
JPS5491087A (en) Manufacture of thin-film solar cell
JPS54153573A (en) Manufacture for compound semiconductor device
JPS554904A (en) Semi-conductor device
JPS5456766A (en) Semiconductor device
JPS5539617A (en) Manufacturing of glass mold type diode
JPS5612740A (en) Semiconductor device and manufacture thereof
JPS5245270A (en) Semiconductor device
JPS5421261A (en) Manufacture for semiconductor device
JPS5468162A (en) Semiconductor device
JPS52130295A (en) Semiconductor light emitting device
JPS5291385A (en) Semiconductor device
JPS5480688A (en) Schottky diode and its manufacture
JPS5373976A (en) Manufacture for schottky barrier type semiconductor device
JPS53142880A (en) Manufacture for semicondoctor device
JPS5546565A (en) Semiconductor device
JPS5341180A (en) Manufacture of semiconductor device
JPS5519837A (en) Semiconductor container
JPS5260073A (en) Production of semiconductor device
JPS56115564A (en) Manufacture of semiconductor integrated circuit device
JPS5513948A (en) Structure of electrode
JPS53114365A (en) Manufacture of semiconductor device
JPS5477570A (en) Production of semiconductor element
JPS5591132A (en) Semiconductor device