JPS54153573A - Manufacture for compound semiconductor device - Google Patents

Manufacture for compound semiconductor device

Info

Publication number
JPS54153573A
JPS54153573A JP6296478A JP6296478A JPS54153573A JP S54153573 A JPS54153573 A JP S54153573A JP 6296478 A JP6296478 A JP 6296478A JP 6296478 A JP6296478 A JP 6296478A JP S54153573 A JPS54153573 A JP S54153573A
Authority
JP
Japan
Prior art keywords
layer
substrate
copper frame
pellet
molten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6296478A
Other languages
Japanese (ja)
Inventor
Susumu Yoshida
Kotaro Mitsui
Josuke Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6296478A priority Critical patent/JPS54153573A/en
Publication of JPS54153573A publication Critical patent/JPS54153573A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Abstract

PURPOSE: To establish the bonding method for compound semiconductor pellet rich in the reliability and having excellent yield rate and workability.
CONSTITUTION: The substrate 1 for GaAs infrared LED consists of the n+ type substrate 1a, n type layer 1b, and p type layer 1c, the anode electrode 2 is formed at a part of the major plane, the cathode electrode 3 is formed at the entire major plane of the substrate 1a, where the element which is eutectic to Au formed on the electrode 3 for example, Ge layer 4 is placed. The GaAs infrared LED pellet is bonded with the metal substrate 5, e.g. copper frame, and on the bonding layer, the layer of element having smaller mutual diffusion with Au, e.g. Ni layer 6 and further, Au layer 7 are formed. Then, Au of the substrate 5 is increased in temperature to the eutectic point with Ge, and the Ge layer 4 of pellet is contacted with the Au layer 7 of the copper frame 5 and it is lightly depressed from the upper side. In this case, the Ge layer 4 and the Au layer 7 formed on the substrate 5 are alloyed and molten. This alloy is molten with the cathode electrode 3 and the copper frame 5. Further, when the copper frame 5 is cooled, molten Au and Ge alloy is solidified, and the GaAs infrared LED pellet is fixed on the copper frame 5.
COPYRIGHT: (C)1979,JPO&Japio
JP6296478A 1978-05-25 1978-05-25 Manufacture for compound semiconductor device Pending JPS54153573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6296478A JPS54153573A (en) 1978-05-25 1978-05-25 Manufacture for compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6296478A JPS54153573A (en) 1978-05-25 1978-05-25 Manufacture for compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS54153573A true JPS54153573A (en) 1979-12-03

Family

ID=13215514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6296478A Pending JPS54153573A (en) 1978-05-25 1978-05-25 Manufacture for compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS54153573A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574184A (en) * 1980-06-10 1982-01-09 Toshiba Corp Metallic thin strip for installing semiconductor light-emitting element
JPS574183A (en) * 1980-06-10 1982-01-09 Toshiba Corp Metallic thin strip for installing semiconductor light-emitting element
JPS574182A (en) * 1980-06-10 1982-01-09 Toshiba Corp Metallic thin strip for installing semiconductor light-emitting element
JPS57107084A (en) * 1980-12-25 1982-07-03 Toshiba Corp Compound semiconductor luminous element device
US4824009A (en) * 1981-12-31 1989-04-25 International Business Machines Corporation Process for braze attachment of electronic package members

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574184A (en) * 1980-06-10 1982-01-09 Toshiba Corp Metallic thin strip for installing semiconductor light-emitting element
JPS574183A (en) * 1980-06-10 1982-01-09 Toshiba Corp Metallic thin strip for installing semiconductor light-emitting element
JPS574182A (en) * 1980-06-10 1982-01-09 Toshiba Corp Metallic thin strip for installing semiconductor light-emitting element
JPS57107084A (en) * 1980-12-25 1982-07-03 Toshiba Corp Compound semiconductor luminous element device
US4824009A (en) * 1981-12-31 1989-04-25 International Business Machines Corporation Process for braze attachment of electronic package members

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