JPS574184A - Metallic thin strip for installing semiconductor light-emitting element - Google Patents

Metallic thin strip for installing semiconductor light-emitting element

Info

Publication number
JPS574184A
JPS574184A JP7817680A JP7817680A JPS574184A JP S574184 A JPS574184 A JP S574184A JP 7817680 A JP7817680 A JP 7817680A JP 7817680 A JP7817680 A JP 7817680A JP S574184 A JPS574184 A JP S574184A
Authority
JP
Japan
Prior art keywords
thin strip
metallic thin
emitting element
semiconductor light
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7817680A
Other languages
Japanese (ja)
Inventor
Ikuo Fukuda
Kiyoshi Usui
Hiroshi Yamamoto
Masamichi Shindo
Masanobu Fujisaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7817680A priority Critical patent/JPS574184A/en
Publication of JPS574184A publication Critical patent/JPS574184A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

PURPOSE:To prevent the lowering of luminous output, and to reduce cost by laminating a silver layer on the first layer coated with the resin of the metallic thin strip for installing the semiconductor light-emitting element through a metallic layer into which copper is difficult to diffuse. CONSTITUTION:The whole surface of an Fe raw material 21 is plated 22 normally with copper, a section coated with a transparent or semitransparent resin in a post process is plated with metal 23, into which Cu is difficult to diffuse, such as Ni, Te, W, Au, Cr, etc., and Ag 24 is stacked. Ag need not be coated with Ni on the whole surface. According to this constitution, the expensive Ag layer is thinned and the amount of Cu precipitating on the surface can be decreased up to the one seventh or one tenth of conventional constitution in the metallic thin strip, and cost is reduced while the lowering of luminous output can be prevented.
JP7817680A 1980-06-10 1980-06-10 Metallic thin strip for installing semiconductor light-emitting element Pending JPS574184A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7817680A JPS574184A (en) 1980-06-10 1980-06-10 Metallic thin strip for installing semiconductor light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7817680A JPS574184A (en) 1980-06-10 1980-06-10 Metallic thin strip for installing semiconductor light-emitting element

Publications (1)

Publication Number Publication Date
JPS574184A true JPS574184A (en) 1982-01-09

Family

ID=13654646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7817680A Pending JPS574184A (en) 1980-06-10 1980-06-10 Metallic thin strip for installing semiconductor light-emitting element

Country Status (1)

Country Link
JP (1) JPS574184A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116910A (en) * 1982-12-23 1984-07-06 Matsushita Electric Ind Co Ltd Video tape recorder
JPS62155739A (en) * 1985-12-18 1987-07-10 ゼネラル・エレクトリツク・カンパニイ Source circuit
JPH08222676A (en) * 1995-02-14 1996-08-30 Rohm Co Ltd Lead frame and manufacture of resin sealed semiconductor device employing it
JP2002094130A (en) * 1999-01-05 2002-03-29 Nichia Chem Ind Ltd Light emitting diode, its manufacturing method and indicating device using the same
JP2005347375A (en) * 2004-06-01 2005-12-15 Shinko Electric Ind Co Ltd Stem for light-emitting element, and optical semiconductor device
JP2012033919A (en) * 2010-07-09 2012-02-16 Furukawa Electric Co Ltd:The Lead frame for optical semiconductor device, method of manufacturing the same, and optical semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54153573A (en) * 1978-05-25 1979-12-03 Mitsubishi Electric Corp Manufacture for compound semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54153573A (en) * 1978-05-25 1979-12-03 Mitsubishi Electric Corp Manufacture for compound semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116910A (en) * 1982-12-23 1984-07-06 Matsushita Electric Ind Co Ltd Video tape recorder
JPS62155739A (en) * 1985-12-18 1987-07-10 ゼネラル・エレクトリツク・カンパニイ Source circuit
JPH08222676A (en) * 1995-02-14 1996-08-30 Rohm Co Ltd Lead frame and manufacture of resin sealed semiconductor device employing it
JP2002094130A (en) * 1999-01-05 2002-03-29 Nichia Chem Ind Ltd Light emitting diode, its manufacturing method and indicating device using the same
JP2005347375A (en) * 2004-06-01 2005-12-15 Shinko Electric Ind Co Ltd Stem for light-emitting element, and optical semiconductor device
JP2012033919A (en) * 2010-07-09 2012-02-16 Furukawa Electric Co Ltd:The Lead frame for optical semiconductor device, method of manufacturing the same, and optical semiconductor device

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