JPS5621354A - Bonding wire for semiconductor element - Google Patents

Bonding wire for semiconductor element

Info

Publication number
JPS5621354A
JPS5621354A JP9691979A JP9691979A JPS5621354A JP S5621354 A JPS5621354 A JP S5621354A JP 9691979 A JP9691979 A JP 9691979A JP 9691979 A JP9691979 A JP 9691979A JP S5621354 A JPS5621354 A JP S5621354A
Authority
JP
Japan
Prior art keywords
amount
wire
junction
coating
groups
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9691979A
Other languages
Japanese (ja)
Inventor
Shozo Hayashi
Susumu Tomiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Tanaka Kikinzoku Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Tanaka Kikinzoku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK, Tanaka Kikinzoku Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP9691979A priority Critical patent/JPS5621354A/en
Publication of JPS5621354A publication Critical patent/JPS5621354A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
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    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a high quality junction wire by coating a high purity Ag wire with high purity Au or alloys adding Be, Ca, Co, Fe, Ge, Ni or one group of Pd, Pt, Rb, Ir, Os, Ru or elements out of both groups to Au. CONSTITUTION:Ag and Au of 99.99W/O or more are easily alloyed and have good break strength and metallic wires composing of the above Ag and Au will not peel off at the time of junction. The sulfuration of Ag will also be prevented by Au coating. If the gross amount, about 0.0003-0.01W/O, out of Be, Ca, Co, Fe, Ni is added to Au, mechanical strength will further be increased. The amount of 0.0003-0.01W/O, or less will have no effect and that of 0.01W/O or more will have inferior junction. Pd, Pt, Rh, Ir, Os, Ru also adapt well themselves to Au or Ag. Therefore, 0.0003-0.1W/O in gross amount out of them may be added to Au or Ag to increase the mechanical strength. The amount of 0.0003W/O or less will have no effect and the slip of wire is not good for the amount of 0.1W/O or more. When addition is made from both groups, about 0.0003-0.11W/O in total amount will be suitable.
JP9691979A 1979-07-30 1979-07-30 Bonding wire for semiconductor element Pending JPS5621354A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9691979A JPS5621354A (en) 1979-07-30 1979-07-30 Bonding wire for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9691979A JPS5621354A (en) 1979-07-30 1979-07-30 Bonding wire for semiconductor element

Publications (1)

Publication Number Publication Date
JPS5621354A true JPS5621354A (en) 1981-02-27

Family

ID=14177759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9691979A Pending JPS5621354A (en) 1979-07-30 1979-07-30 Bonding wire for semiconductor element

Country Status (1)

Country Link
JP (1) JPS5621354A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5364706A (en) * 1990-07-20 1994-11-15 Tanaka Denshi Kogyo Kabushiki Kaisha Clad bonding wire for semiconductor device
EP0792517A4 (en) * 1994-11-15 1998-06-24 Formfactor Inc Electrical contact structures from flexible wire
US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
DE10113492A1 (en) * 2001-03-19 2002-10-02 Astrium Gmbh Metallic conductor and cryogenic device
JPWO2002023618A1 (en) * 2000-09-18 2004-01-22 新日本製鐵株式会社 Semiconductor bonding wire and method of manufacturing the same
US6711925B2 (en) * 2001-12-17 2004-03-30 Asep Tec Co., Ltd. Process for manufacturing a conductive wire suitable for use in semiconductor packages
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6778406B2 (en) 1993-11-16 2004-08-17 Formfactor, Inc. Resilient contact structures for interconnecting electronic devices
CN100352026C (en) * 2002-11-27 2007-11-28 新日本制铁株式会社 Gold alloy bonding wire for semiconductor device and process for producing the same
US7390370B2 (en) 2002-04-05 2008-06-24 Nippon Steel Corporation Gold bonding wires for semiconductor devices and method of producing the wires

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5364706A (en) * 1990-07-20 1994-11-15 Tanaka Denshi Kogyo Kabushiki Kaisha Clad bonding wire for semiconductor device
US7225538B2 (en) 1993-11-16 2007-06-05 Formfactor, Inc. Resilient contact structures formed and then attached to a substrate
US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US6778406B2 (en) 1993-11-16 2004-08-17 Formfactor, Inc. Resilient contact structures for interconnecting electronic devices
US6835898B2 (en) 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
EP0792517A4 (en) * 1994-11-15 1998-06-24 Formfactor Inc Electrical contact structures from flexible wire
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
JPWO2002023618A1 (en) * 2000-09-18 2004-01-22 新日本製鐵株式会社 Semiconductor bonding wire and method of manufacturing the same
JP4868694B2 (en) * 2000-09-18 2012-02-01 新日鉄マテリアルズ株式会社 Bonding wire for semiconductor
US7969021B2 (en) 2000-09-18 2011-06-28 Nippon Steel Corporation Bonding wire for semiconductor device and method for producing the same
DE10113492A1 (en) * 2001-03-19 2002-10-02 Astrium Gmbh Metallic conductor and cryogenic device
DE10113492B4 (en) * 2001-03-19 2005-12-01 Eads Astrium Gmbh Electrically conductive wire for applications in low temperature ranges
US6711925B2 (en) * 2001-12-17 2004-03-30 Asep Tec Co., Ltd. Process for manufacturing a conductive wire suitable for use in semiconductor packages
US7390370B2 (en) 2002-04-05 2008-06-24 Nippon Steel Corporation Gold bonding wires for semiconductor devices and method of producing the wires
CN100352026C (en) * 2002-11-27 2007-11-28 新日本制铁株式会社 Gold alloy bonding wire for semiconductor device and process for producing the same

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