JPS6417436A - Composite bonding wire - Google Patents
Composite bonding wireInfo
- Publication number
- JPS6417436A JPS6417436A JP62173509A JP17350987A JPS6417436A JP S6417436 A JPS6417436 A JP S6417436A JP 62173509 A JP62173509 A JP 62173509A JP 17350987 A JP17350987 A JP 17350987A JP S6417436 A JPS6417436 A JP S6417436A
- Authority
- JP
- Japan
- Prior art keywords
- core material
- silver
- coating
- purity
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45644—Gold (Au) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01203—3N purity grades, i.e. 99.9%
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
Abstract
PURPOSE:To suppress age softening of an Ag core material and to maintain high tension intensity and to improve a bonding characteristic, by coating the Ag core material with an Au coating material and adding a specific amount of a specific element in the Ag core material. CONSTITUTION:A periphery of a core material 2, whose main ingredient is pure silver of 99.9W/O or more in purity, is coated with a coating material 3 whose main ingredient is pure gold of 99.99W/O or more in purity. Then an element, which improves a recrystallization temperature of silver and produces no intermetal compound by ternary alloy consisting of silver and gold when a ball is formed upon an operation of bonding, is added in the amount of Hv=45 or less in this core material 2. Hence, age softening of the Ag core material is suppressed and high tension strength is held and a bonding characteristic is improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62173509A JPS6417436A (en) | 1987-07-10 | 1987-07-10 | Composite bonding wire |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62173509A JPS6417436A (en) | 1987-07-10 | 1987-07-10 | Composite bonding wire |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6417436A true JPS6417436A (en) | 1989-01-20 |
Family
ID=15961847
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62173509A Pending JPS6417436A (en) | 1987-07-10 | 1987-07-10 | Composite bonding wire |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6417436A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5097100A (en) * | 1991-01-25 | 1992-03-17 | Sundstrand Data Control, Inc. | Noble metal plated wire and terminal assembly, and method of making the same |
US5364706A (en) * | 1990-07-20 | 1994-11-15 | Tanaka Denshi Kogyo Kabushiki Kaisha | Clad bonding wire for semiconductor device |
US6711925B2 (en) * | 2001-12-17 | 2004-03-30 | Asep Tec Co., Ltd. | Process for manufacturing a conductive wire suitable for use in semiconductor packages |
WO2021065036A1 (en) * | 2019-10-01 | 2021-04-08 | 田中電子工業株式会社 | Wire joining structure, bonding wire used in same, and semiconductor device |
WO2022085365A1 (en) * | 2020-10-20 | 2022-04-28 | 日鉄マイクロメタル株式会社 | Ag ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE |
-
1987
- 1987-07-10 JP JP62173509A patent/JPS6417436A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5364706A (en) * | 1990-07-20 | 1994-11-15 | Tanaka Denshi Kogyo Kabushiki Kaisha | Clad bonding wire for semiconductor device |
US5097100A (en) * | 1991-01-25 | 1992-03-17 | Sundstrand Data Control, Inc. | Noble metal plated wire and terminal assembly, and method of making the same |
US6711925B2 (en) * | 2001-12-17 | 2004-03-30 | Asep Tec Co., Ltd. | Process for manufacturing a conductive wire suitable for use in semiconductor packages |
WO2021065036A1 (en) * | 2019-10-01 | 2021-04-08 | 田中電子工業株式会社 | Wire joining structure, bonding wire used in same, and semiconductor device |
JPWO2021065036A1 (en) * | 2019-10-01 | 2021-04-08 | ||
CN114502754A (en) * | 2019-10-01 | 2022-05-13 | 田中电子工业株式会社 | Wire bonding structure, bonding wire used therein, and semiconductor device |
TWI812853B (en) * | 2019-10-01 | 2023-08-21 | 日商田中電子工業股份有限公司 | Wire bonding structure, bonding wire used in the wire bonding structure, and semiconductor device |
CN114502754B (en) * | 2019-10-01 | 2023-11-17 | 田中电子工业株式会社 | Wire bonding structure, bonding wire used therein, and semiconductor device |
WO2022085365A1 (en) * | 2020-10-20 | 2022-04-28 | 日鉄マイクロメタル株式会社 | Ag ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE |
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