JPS57122554A - Lead frame for semiconductor device - Google Patents

Lead frame for semiconductor device

Info

Publication number
JPS57122554A
JPS57122554A JP727081A JP727081A JPS57122554A JP S57122554 A JPS57122554 A JP S57122554A JP 727081 A JP727081 A JP 727081A JP 727081 A JP727081 A JP 727081A JP S57122554 A JPS57122554 A JP S57122554A
Authority
JP
Japan
Prior art keywords
plating
lead frame
thick
plated
assembling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP727081A
Other languages
Japanese (ja)
Inventor
Yoshiaki Tatsumi
Toshikazu Ideie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP727081A priority Critical patent/JPS57122554A/en
Publication of JPS57122554A publication Critical patent/JPS57122554A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49579Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582Metallic layers on lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To enable the assembling of a semiconductor device having stability for thermal load at assembling time, good quality and reliability by plating Cu of the prescribed thickness on an Ni-plated lead frame, and plating Ag of the prescribed thickness on the Cu-plated lead frame as an outer layer. CONSTITUTION:A blank ribbon made, for example, of 50%-Ni iron material is punched in the shape of a lead frame, Ni plating of 2-4mum thick is achieved by glossy leveling solution, and Cu-plating of 0.05-0.3mum thick is performed on the lead frame by CuCN series plating solution. Subsequently, Ag plating of 0.5-3mum thick is formed by AgCN series plating solution on the Cu-plated layer, and a lead frame which mounts a semiconductor pellet is produced. Thus, the plating thickness is formed thinner than the conventional example, thereby eliminating a swell or exfoliation of the Ag-plated layer even if an annealing step is not ahcieved, thereby improving the quality and reliability of the assembling apparatus.
JP727081A 1981-01-22 1981-01-22 Lead frame for semiconductor device Pending JPS57122554A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP727081A JPS57122554A (en) 1981-01-22 1981-01-22 Lead frame for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP727081A JPS57122554A (en) 1981-01-22 1981-01-22 Lead frame for semiconductor device

Publications (1)

Publication Number Publication Date
JPS57122554A true JPS57122554A (en) 1982-07-30

Family

ID=11661331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP727081A Pending JPS57122554A (en) 1981-01-22 1981-01-22 Lead frame for semiconductor device

Country Status (1)

Country Link
JP (1) JPS57122554A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59219945A (en) * 1983-05-28 1984-12-11 Masami Kobayashi Lead frame for integrated circuit
JPS607157A (en) * 1983-06-25 1985-01-14 Masami Kobayashi Lead frame for ic
JPS60147145A (en) * 1984-01-10 1985-08-03 Hitachi Cable Ltd Lead frame for semiconductor
JPS60225456A (en) * 1984-04-24 1985-11-09 Hitachi Cable Ltd Lead frame for semiconductor
JPS6180844A (en) * 1984-09-28 1986-04-24 Furukawa Electric Co Ltd:The Basic wire for semiconductor lead frame
JPS62163353A (en) * 1986-01-14 1987-07-20 Hitachi Cable Ltd Lead frame with strong peeling-preventive effect for copper oxide film
JP2016006820A (en) * 2014-06-20 2016-01-14 大和電機工業株式会社 Encapsulation member, and manufacturing method of package for electronic component
US11011476B2 (en) 2018-03-12 2021-05-18 Stmicroelectronics International N.V. Lead frame surface finishing
US11735512B2 (en) 2018-12-31 2023-08-22 Stmicroelectronics International N.V. Leadframe with a metal oxide coating and method of forming the same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59219945A (en) * 1983-05-28 1984-12-11 Masami Kobayashi Lead frame for integrated circuit
JPS607157A (en) * 1983-06-25 1985-01-14 Masami Kobayashi Lead frame for ic
JPS60147145A (en) * 1984-01-10 1985-08-03 Hitachi Cable Ltd Lead frame for semiconductor
JPS60225456A (en) * 1984-04-24 1985-11-09 Hitachi Cable Ltd Lead frame for semiconductor
JPS6180844A (en) * 1984-09-28 1986-04-24 Furukawa Electric Co Ltd:The Basic wire for semiconductor lead frame
JPH0160948B2 (en) * 1984-09-28 1989-12-26 Furukawa Electric Co Ltd
JPS62163353A (en) * 1986-01-14 1987-07-20 Hitachi Cable Ltd Lead frame with strong peeling-preventive effect for copper oxide film
JP2016006820A (en) * 2014-06-20 2016-01-14 大和電機工業株式会社 Encapsulation member, and manufacturing method of package for electronic component
US11011476B2 (en) 2018-03-12 2021-05-18 Stmicroelectronics International N.V. Lead frame surface finishing
US11756899B2 (en) 2018-03-12 2023-09-12 Stmicroelectronics S.R.L. Lead frame surface finishing
US11735512B2 (en) 2018-12-31 2023-08-22 Stmicroelectronics International N.V. Leadframe with a metal oxide coating and method of forming the same

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