JPS5681978A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS5681978A
JPS5681978A JP15807379A JP15807379A JPS5681978A JP S5681978 A JPS5681978 A JP S5681978A JP 15807379 A JP15807379 A JP 15807379A JP 15807379 A JP15807379 A JP 15807379A JP S5681978 A JPS5681978 A JP S5681978A
Authority
JP
Japan
Prior art keywords
layers
layer
thyristor
forming
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15807379A
Other languages
Japanese (ja)
Other versions
JPS6152586B2 (en
Inventor
Tatsuo Yamazaki
Shuroku Sakurada
Katsumi Akabane
Isao Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Power Semiconductor Device Ltd
Original Assignee
Hitachi Ltd
Hitachi Haramachi Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Haramachi Electronics Ltd filed Critical Hitachi Ltd
Priority to JP15807379A priority Critical patent/JPS5681978A/en
Publication of JPS5681978A publication Critical patent/JPS5681978A/en
Publication of JPS6152586B2 publication Critical patent/JPS6152586B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To preferably operate a thyristor by forming the thyristor of an assembly of unit gate turn-off thyristors when forming the thyristor, and forming some of the respective PE layers formed on the reverse surface of the semiconductor substrate over the projected regions of the respective NE layers on the obverse surface of the substrate. CONSTITUTION:An N<+> type layer 6 is formed on both edges of the surface of the NE layer 4 forming a thyristor, is covered with a stabilizing film 10 on the surface, a PE layer 3 is formed while surrounding the inside with a groove 8 having a stabilizing film 9, and NE layers 2a-2c are formed therein. P<+> type layer 7 is also formed on the edges of both abverse and reverse surfaces of the layer 4, PE layers 5a-5d are formed in the layer 4 surrounded by the layer 7, and a unit thyristor is formed with the layers 2a-2c and 5a-5d. With this configuration the layers 5a and 5d are formed in rectangular shape, the layers 5b and 5c are formed in ring shape, the layers 5b and 5c are formed across the projected regions directly under the projection of the layers 2a-2c. Thus, even if the production accuracy is low, currents flowing through the respective unit thyristors are averaged.
JP15807379A 1979-12-07 1979-12-07 Thyristor Granted JPS5681978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15807379A JPS5681978A (en) 1979-12-07 1979-12-07 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15807379A JPS5681978A (en) 1979-12-07 1979-12-07 Thyristor

Publications (2)

Publication Number Publication Date
JPS5681978A true JPS5681978A (en) 1981-07-04
JPS6152586B2 JPS6152586B2 (en) 1986-11-13

Family

ID=15663698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15807379A Granted JPS5681978A (en) 1979-12-07 1979-12-07 Thyristor

Country Status (1)

Country Link
JP (1) JPS5681978A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193169A (en) * 1987-10-02 1989-04-12 Semiconductor Res Found Power semiconductor element
US5093705A (en) * 1985-06-28 1992-03-03 Siemens Aktiengesellschaft Thyristor with reduced central zone thickness

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5093705A (en) * 1985-06-28 1992-03-03 Siemens Aktiengesellschaft Thyristor with reduced central zone thickness
JPH0193169A (en) * 1987-10-02 1989-04-12 Semiconductor Res Found Power semiconductor element

Also Published As

Publication number Publication date
JPS6152586B2 (en) 1986-11-13

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