JPS5642337A - Formation of electrode on semiconductor element - Google Patents

Formation of electrode on semiconductor element

Info

Publication number
JPS5642337A
JPS5642337A JP11697979A JP11697979A JPS5642337A JP S5642337 A JPS5642337 A JP S5642337A JP 11697979 A JP11697979 A JP 11697979A JP 11697979 A JP11697979 A JP 11697979A JP S5642337 A JPS5642337 A JP S5642337A
Authority
JP
Japan
Prior art keywords
electrode
plating
semiconductor element
deterioration
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11697979A
Other languages
Japanese (ja)
Inventor
Hiroyuki Kitamura
Mikio Murozono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11697979A priority Critical patent/JPS5642337A/en
Publication of JPS5642337A publication Critical patent/JPS5642337A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent the deterioration of a leaking characteristic by a method wherein a photo sensitive resin film mask is provided and nonelectrolytic plating is made on the surface of the semiconductor element to form the electrode. CONSTITUTION:A P-layer 2 is arranged on an N type Si substrate 1, an SiO23, the photo sensitive resist 4 are laminated and an opening is selectively made to expose the P-layer 2. Next thereto, when the resist 4 is eliminated after an Ni 7 is precipitated wholly by the nonelectrolytic plating, the Ni plating 7 is remained only at the electrode forming region. An Na ion or the like is not mixed in from the plating bath on the SiO2 film, thus the deterioration of the leaking characteristic can be prevented without a PSG coating.
JP11697979A 1979-09-12 1979-09-12 Formation of electrode on semiconductor element Pending JPS5642337A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11697979A JPS5642337A (en) 1979-09-12 1979-09-12 Formation of electrode on semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11697979A JPS5642337A (en) 1979-09-12 1979-09-12 Formation of electrode on semiconductor element

Publications (1)

Publication Number Publication Date
JPS5642337A true JPS5642337A (en) 1981-04-20

Family

ID=14700480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11697979A Pending JPS5642337A (en) 1979-09-12 1979-09-12 Formation of electrode on semiconductor element

Country Status (1)

Country Link
JP (1) JPS5642337A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823433A (en) * 1981-08-05 1983-02-12 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS631478A (en) * 1986-06-20 1988-01-06 Noda Plywood Mfg Co Ltd Painting apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5169363A (en) * 1974-12-13 1976-06-15 Fujitsu Ltd Handotaisochino seizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5169363A (en) * 1974-12-13 1976-06-15 Fujitsu Ltd Handotaisochino seizohoho

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823433A (en) * 1981-08-05 1983-02-12 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS631478A (en) * 1986-06-20 1988-01-06 Noda Plywood Mfg Co Ltd Painting apparatus

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