JPS54109386A - Manufacture for silicon symmetrical switch - Google Patents
Manufacture for silicon symmetrical switchInfo
- Publication number
- JPS54109386A JPS54109386A JP1686678A JP1686678A JPS54109386A JP S54109386 A JPS54109386 A JP S54109386A JP 1686678 A JP1686678 A JP 1686678A JP 1686678 A JP1686678 A JP 1686678A JP S54109386 A JPS54109386 A JP S54109386A
- Authority
- JP
- Japan
- Prior art keywords
- time
- type
- turn
- regions
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- JCALBVZBIRXHMQ-UHFFFAOYSA-N [[hydroxy-(phosphonoamino)phosphoryl]amino]phosphonic acid Chemical compound OP(O)(=O)NP(O)(=O)NP(O)(O)=O JCALBVZBIRXHMQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To obtain the switching characteristics suitable for the oscillation booster, by making easy the control of turn off time, through the radiation of gamma rays, to the symmetrical switch of PNPNP five layer construction formed with P type Si substrate. CONSTITUTION:The N type layers 2 and 3 are formed by diffusion on the both sides of the P type Si substrate 1 being the base region, and the peripheral parts 40 and 50 of the PN junctions 4 and 5 produced at this time are made deeper slightly than those at the center. Next, the P type regions 6 and 7 are formed by diffusion at the surface of the layers 2 and 3, producing the PN junctions 8 and 9, and the first electrode is attached by bridging the regions 2 and 6 and the second electrode 11 by bridging the regions 3 and 7. After that, the end exposed is protected with the glass films 16 and 17, constituting the symmetrical switch. Further, gamma rays of 5 X 10<6> to 5 X 10<7>R is radiated to the switch thus assembled, adjusting the turn off time. The turn off time is too longer with the dose less than 5 X 10<6>R and no effect to improvement even with excess of 5 X 10<7>R.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1686678A JPS54109386A (en) | 1978-02-15 | 1978-02-15 | Manufacture for silicon symmetrical switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1686678A JPS54109386A (en) | 1978-02-15 | 1978-02-15 | Manufacture for silicon symmetrical switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54109386A true JPS54109386A (en) | 1979-08-27 |
Family
ID=11928127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1686678A Pending JPS54109386A (en) | 1978-02-15 | 1978-02-15 | Manufacture for silicon symmetrical switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54109386A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01307264A (en) * | 1988-06-06 | 1989-12-12 | Nippon Telegr & Teleph Corp <Ntt> | Pnpn surge-preventing device |
| JPH03215978A (en) * | 1990-01-22 | 1991-09-20 | Shindengen Electric Mfg Co Ltd | Bidirectional diode-thyristor |
| JPH03239367A (en) * | 1990-02-16 | 1991-10-24 | Shindengen Electric Mfg Co Ltd | Bidirectional 2-terminal thyristor |
| JPH05160391A (en) * | 1991-12-02 | 1993-06-25 | Sankooshiya:Kk | Holding current controlling method of anti-surge device |
-
1978
- 1978-02-15 JP JP1686678A patent/JPS54109386A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01307264A (en) * | 1988-06-06 | 1989-12-12 | Nippon Telegr & Teleph Corp <Ntt> | Pnpn surge-preventing device |
| JPH03215978A (en) * | 1990-01-22 | 1991-09-20 | Shindengen Electric Mfg Co Ltd | Bidirectional diode-thyristor |
| JPH03239367A (en) * | 1990-02-16 | 1991-10-24 | Shindengen Electric Mfg Co Ltd | Bidirectional 2-terminal thyristor |
| JPH05160391A (en) * | 1991-12-02 | 1993-06-25 | Sankooshiya:Kk | Holding current controlling method of anti-surge device |
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